Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy

J.F. Siliquini, John Dell, Charles Musca, Lorenzo Faraone, J. Piotrowski

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In this work we characterise the p-type converted region occurring in both vacancy and extrinsically doped p-type Hg1-xCdxTe (x approximate to 0.3) after standard reactive-ion-etch (RTE) process. The laser beam induced current (LBIC) technique is used to characterise parameters such as lateral and vertical conversion depth. Furthermore, by fitting a theoretically determined LBIC signature to the measured LBIC over the temperature range 80-300 K. it is possible to estimate the donor level density of the n-type converted region. (C) 1998 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1219-1222
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998

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