Characterisation of reactive ion etching induced type conversion in HgCdTe

T. Nguyen; Jarek Antoszewski; Charles Musca; D.A. Redfern; John Dell; Lorenzo Faraone

Characterisation of reactive ion etching induced type conversion in HgCdTe

T. Nguyen, Jarek Antoszewski, Charles Musca, D.A. Redfern, John Dell, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD
Editors	Leonard D. Broekman, Brian F. Usher, John D. Riley
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	85-88
Volume	1
Edition	La Trobe University, Melbourne
ISBN (Print)	0780366980
Publication status	Published - 2002
Event	Characterisation of reactive ion etching induced type conversion in HgCdTe - La Trobe University, Melbourne Duration: 1 Jan 2002 → …

Conference

Conference	Characterisation of reactive ion etching induced type conversion in HgCdTe
Period	1/01/02 → …

Cite this

Nguyen, T., Antoszewski, J., Musca, C., Redfern, D. A., Dell, J., & Faraone, L. (2002). Characterisation of reactive ion etching induced type conversion in HgCdTe. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD (La Trobe University, Melbourne ed., Vol. 1, pp. 85-88). IEEE, Institute of Electrical and Electronics Engineers.

Nguyen, T. ; Antoszewski, Jarek ; Musca, Charles et al. / Characterisation of reactive ion etching induced type conversion in HgCdTe. Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD. editor / Leonard D. Broekman ; Brian F. Usher ; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2002. pp. 85-88

@inproceedings{01e4e7fd2ea24166adc3bb261f7bf555,

title = "Characterisation of reactive ion etching induced type conversion in HgCdTe",

author = "T. Nguyen and Jarek Antoszewski and Charles Musca and D.A. Redfern and John Dell and Lorenzo Faraone",

year = "2002",

language = "English",

isbn = "0780366980",

volume = "1",

pages = "85--88",

editor = "Broekman, {Leonard D.} and Usher, {Brian F.} and Riley, {John D.}",

booktitle = "Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "La Trobe University, Melbourne",

note = "Characterisation of reactive ion etching induced type conversion in HgCdTe ; Conference date: 01-01-2002",

}

Nguyen, T, Antoszewski, J, Musca, C, Redfern, DA, Dell, J & Faraone, L 2002, Characterisation of reactive ion etching induced type conversion in HgCdTe. in LD Broekman, BF Usher & JD Riley (eds), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD. La Trobe University, Melbourne edn, vol. 1, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 85-88, Characterisation of reactive ion etching induced type conversion in HgCdTe, 1/01/02.

Characterisation of reactive ion etching induced type conversion in HgCdTe. / Nguyen, T.; Antoszewski, Jarek; Musca, Charles et al.
Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD. ed. / Leonard D. Broekman; Brian F. Usher; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2002. p. 85-88.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Characterisation of reactive ion etching induced type conversion in HgCdTe

AU - Nguyen, T.

AU - Antoszewski, Jarek

AU - Musca, Charles

AU - Redfern, D.A.

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2002

Y1 - 2002

M3 - Conference paper

SN - 0780366980

VL - 1

SP - 85

EP - 88

BT - Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD

A2 - Broekman, Leonard D.

A2 - Usher, Brian F.

A2 - Riley, John D.

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - Characterisation of reactive ion etching induced type conversion in HgCdTe

Y2 - 1 January 2002

ER -

Nguyen T, Antoszewski J, Musca C, Redfern DA, Dell J , Faraone L. Characterisation of reactive ion etching induced type conversion in HgCdTe. In Broekman LD, Usher BF, Riley JD, editors, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD. La Trobe University, Melbourne ed. Vol. 1. USA: IEEE, Institute of Electrical and Electronics Engineers. 2002. p. 85-88