Characterisation of reactive ion etching induced type conversion in HgCdTe

T. Nguyen, Jarek Antoszewski, Charles Musca, D.A. Redfern, John Dell, Lorenzo Faraone

Research output: Chapter in Book/Conference paperConference paper

Original languageEnglish
Title of host publicationProceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD
EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
Place of PublicationUSA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages85-88
Volume1
EditionLa Trobe University, Melbourne
ISBN (Print)0780366980
Publication statusPublished - 2002
EventCharacterisation of reactive ion etching induced type conversion in HgCdTe - La Trobe University, Melbourne
Duration: 1 Jan 2002 → …

Conference

ConferenceCharacterisation of reactive ion etching induced type conversion in HgCdTe
Period1/01/02 → …

Cite this

Nguyen, T., Antoszewski, J., Musca, C., Redfern, D. A., Dell, J., & Faraone, L. (2002). Characterisation of reactive ion etching induced type conversion in HgCdTe. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD (La Trobe University, Melbourne ed., Vol. 1, pp. 85-88). IEEE, Institute of Electrical and Electronics Engineers.