Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

Tamara B. Fehlberg, Gilberto A. Umana-Membreno, Chad S. Gallinat, Gregor Koblmüller, Sarah Bernardis, Brett D. Nener, Giacinta Parish, James S. Speck

    Research output: Contribution to journalConference articlepeer-review

    14 Citations (Scopus)


    Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm 2/(Vs) at 300 K with a concentration of 1.5 × 1017 cm-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN.

    Original languageEnglish
    Pages (from-to)2423-2427
    Number of pages5
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Issue number7
    Publication statusPublished - 1 Dec 2007
    EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
    Duration: 22 Oct 200627 Oct 2006


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