Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

Tamara B. Fehlberg; Gilberto A. Umana-Membreno; Chad S. Gallinat; Gregor Koblmüller; Sarah Bernardis; Brett D. Nener; Giacinta Parish; James S. Speck

doi:10.1002/pssc.200674780

Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

Tamara B. Fehlberg, Gilberto A. Umana-Membreno, Chad S. Gallinat, Gregor Koblmüller, Sarah Bernardis, Brett D. Nener, Giacinta Parish, James S. Speck

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm ²/(Vs) at 300 K with a concentration of 1.5 × 10¹⁷ cm^-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN.

Original language	English
Pages (from-to)	2423-2427
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674780
Publication status	Published - 1 Dec 2007
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 22 Oct 2006 → 27 Oct 2006

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title = "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy",

abstract = "Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm 2/(Vs) at 300 K with a concentration of 1.5 × 1017 cm-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN.",

author = "Fehlberg, {Tamara B.} and Umana-Membreno, {Gilberto A.} and Gallinat, {Chad S.} and Gregor Koblm{\"u}ller and Sarah Bernardis and Nener, {Brett D.} and Giacinta Parish and Speck, {James S.}",

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doi = "10.1002/pssc.200674780",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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T1 - Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

AU - Fehlberg, Tamara B.

AU - Umana-Membreno, Gilberto A.

AU - Gallinat, Chad S.

AU - Koblmüller, Gregor

AU - Bernardis, Sarah

AU - Nener, Brett D.

AU - Parish, Giacinta

AU - Speck, James S.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm 2/(Vs) at 300 K with a concentration of 1.5 × 1017 cm-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN.

AB - Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm 2/(Vs) at 300 K with a concentration of 1.5 × 1017 cm-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN.

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DO - 10.1002/pssc.200674780

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EP - 2427

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

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