Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species; attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570cm(2)/(Vs) at 300 K, which rises to over 5100cm(2)/(Vs) at 150 K. Bulk electron concentration in the sample is 1.5 x 10(17) cm(-3). The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.