Characterisation of Multiple Carrier Transport in Indium Nitride grown by Molecular Beam Epitaxy

Tamara Fehlberg; Gilberto A. Umana-Membreno; Brett Nener; Giacinta Parish; C.S. Gallinat; G. Koblmuller; S. Rajan; S. Bernardis; J.S. Speck

doi:10.1143/JJAP.45.L1090

Characterisation of Multiple Carrier Transport in Indium Nitride grown by Molecular Beam Epitaxy

Tamara Fehlberg, Gilberto A. Umana-Membreno, Brett Nener, Giacinta Parish, C.S. Gallinat, G. Koblmuller, S. Rajan, S. Bernardis, J.S. Speck

Graduate Research School

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species; attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570cm(2)/(Vs) at 300 K, which rises to over 5100cm(2)/(Vs) at 150 K. Bulk electron concentration in the sample is 1.5 x 10(17) cm(-3). The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.

Original language	English
Pages (from-to)	L1090-L1092
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	41
DOIs	https://doi.org/10.1143/JJAP.45.L1090
Publication status	Published - 2006

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title = "Characterisation of Multiple Carrier Transport in Indium Nitride grown by Molecular Beam Epitaxy",

abstract = "Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species; attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570cm(2)/(Vs) at 300 K, which rises to over 5100cm(2)/(Vs) at 150 K. Bulk electron concentration in the sample is 1.5 x 10(17) cm(-3). The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.",

author = "Tamara Fehlberg and Umana-Membreno, {Gilberto A.} and Brett Nener and Giacinta Parish and C.S. Gallinat and G. Koblmuller and S. Rajan and S. Bernardis and J.S. Speck",

year = "2006",

doi = "10.1143/JJAP.45.L1090",

language = "English",

volume = "45",

pages = "L1090--L1092",

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TY - JOUR

T1 - Characterisation of Multiple Carrier Transport in Indium Nitride grown by Molecular Beam Epitaxy

AU - Fehlberg, Tamara

AU - Umana-Membreno, Gilberto A.

AU - Nener, Brett

AU - Parish, Giacinta

AU - Gallinat, C.S.

AU - Koblmuller, G.

AU - Rajan, S.

AU - Bernardis, S.

AU - Speck, J.S.

PY - 2006

Y1 - 2006

N2 - Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species; attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570cm(2)/(Vs) at 300 K, which rises to over 5100cm(2)/(Vs) at 150 K. Bulk electron concentration in the sample is 1.5 x 10(17) cm(-3). The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.

AB - Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species; attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570cm(2)/(Vs) at 300 K, which rises to over 5100cm(2)/(Vs) at 150 K. Bulk electron concentration in the sample is 1.5 x 10(17) cm(-3). The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.

U2 - 10.1143/JJAP.45.L1090

DO - 10.1143/JJAP.45.L1090

M3 - Article

SN - 0021-4922

VL - 45

SP - L1090-L1092

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 41

ER -

Characterisation of Multiple Carrier Transport in Indium Nitride grown by Molecular Beam Epitaxy

Abstract

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