Characterisation of Hg0.7Cd0.3Te n- on p-type Structures Obtained by Reactive Ion Etching Induced p- to n Conversion

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	837-840
Journal	Journal of Electronic Materials
Volume	29
Issue number	6
Publication status	Published - 2000

Cite this

@article{fbf29b40c9a84f0aa3e54131ecb924c1,

title = "Characterisation of Hg0.7Cd0.3Te n- on p-type Structures Obtained by Reactive Ion Etching Induced p- to n Conversion",

author = "Jarek Antoszewski and Charles Musca and John Dell and Lorenzo Faraone",

year = "2000",

language = "English",

volume = "29",

pages = "837--840",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "6",

}

TY - JOUR

T1 - Characterisation of Hg0.7Cd0.3Te n- on p-type Structures Obtained by Reactive Ion Etching Induced p- to n Conversion

AU - Antoszewski, Jarek

AU - Musca, Charles

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2000

Y1 - 2000

M3 - Article

SN - 0361-5235

VL - 29

SP - 837

EP - 840

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -