Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs

S.T. Lai, Brett Nener, D. Alexiev

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	COMAD'94 Proceedings
Place of Publication	Sydney
Publisher	Semiconductor Science and Technology Laboratories
Pages	121-127
Volume	ISBN 0-646-21807-7
ISBN (Print)	7646218077
Publication status	Published - 1995
Event	Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs - Duration: 1 Jan 1995 → …

Conference	Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs
Period	1/01/95 → …

Cite this

@inproceedings{f67cb846c69a4e2eae6aaa39dfca8312,

title = "Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs",

author = "S.T. Lai and Brett Nener and D. Alexiev",

year = "1995",

language = "English",

isbn = "7646218077",

volume = "ISBN 0-646-21807-7",

pages = "121--127",

booktitle = "COMAD'94 Proceedings",

publisher = "Semiconductor Science and Technology Laboratories",

note = "Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs ; Conference date: 01-01-1995",

}

Lai, ST, Nener, B & Alexiev, D 1995, Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs. in COMAD'94 Proceedings. vol. ISBN 0-646-21807-7, Semiconductor Science and Technology Laboratories, Sydney, pp. 121-127, Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs, 1/01/95.

TY - GEN

T1 - Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs

AU - Lai, S.T.

AU - Nener, Brett

AU - Alexiev, D.

PY - 1995

Y1 - 1995

M3 - Conference paper

SN - 7646218077

VL - ISBN 0-646-21807-7

SP - 121

EP - 127

BT - COMAD'94 Proceedings

PB - Semiconductor Science and Technology Laboratories

CY - Sydney

T2 - Characterisation of Deep-Level Defects in 1MeV Electron, and Neutron, and Co Gamma Irradiated VPE N-GaAs

Y2 - 1 January 1995

ER -