Characterisation of Dark Current in Novel HgCdTe Mid-Wavelength Infrared Photovoltaic Detectors Based on n-on-p Junctions Formed by Plasma Induced Type Conversion

M.H. Rais; Charles Musca; John Dell; Jarek Antoszewski; Brett Nener; Lorenzo Faraone

Characterisation of Dark Current in Novel HgCdTe Mid-Wavelength Infrared Photovoltaic Detectors Based on n-on-p Junctions Formed by Plasma Induced Type Conversion

M.H. Rais, Charles Musca, John Dell, Jarek Antoszewski, Brett Nener, Lorenzo Faraone

Graduate Research School

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1106-1110
Journal	Journal of Crystal Growth
Volume	214/215
Publication status	Published - 2000

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Cite this

@article{e540fa21d60a4bbfa4e6f9cb47e7f728,

title = "Characterisation of Dark Current in Novel HgCdTe Mid-Wavelength Infrared Photovoltaic Detectors Based on n-on-p Junctions Formed by Plasma Induced Type Conversion",

author = "M.H. Rais and Charles Musca and John Dell and Jarek Antoszewski and Brett Nener and Lorenzo Faraone",

year = "2000",

language = "English",

volume = "214/215",

pages = "1106--1110",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Characterisation of Dark Current in Novel HgCdTe Mid-Wavelength Infrared Photovoltaic Detectors Based on n-on-p Junctions Formed by Plasma Induced Type Conversion

AU - Rais, M.H.

AU - Musca, Charles

AU - Dell, John

AU - Antoszewski, Jarek

AU - Nener, Brett

AU - Faraone, Lorenzo

PY - 2000

Y1 - 2000

M3 - Article

SN - 0022-0248

VL - 214/215

SP - 1106

EP - 1110

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -