Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy

G.K.O. Tsen; Richard Sewell; A.J. Atanacio; K.E. Prince; Charles Musca; John Dell; Jarek Antoszewski; Lorenzo Faraone

Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy

G.K.O. Tsen, Richard Sewell, A.J. Atanacio, K.E. Prince, Charles Musca, John Dell, Jarek Antoszewski, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper

Original language	English
Title of host publication	COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Lorenzo Faraone, Sabine Betts, John Dell, Charles Musca, Brett Nener, Gia Parish, Justin Wehner
Place of Publication	United States of America
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	55-58
Volume	CD Rom
Edition	Perth, Western Australia
ISBN (Print)	1424405785
Publication status	Published - 2007
Event	Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy - Perth, Western Australia Duration: 1 Jan 2007 → …

Conference

Conference	Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy
Period	1/01/07 → …

Cite this

Tsen, G. K. O., Sewell, R., Atanacio, A. J., Prince, K. E., Musca, C., Dell, J., Antoszewski, J., & Faraone, L. (2007). Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy. In L. Faraone, S. Betts, J. Dell, C. Musca, B. Nener, G. Parish, & J. Wehner (Eds.), COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (Perth, Western Australia ed., Vol. CD Rom, pp. 55-58). IEEE, Institute of Electrical and Electronics Engineers.

Tsen, G.K.O. ; Sewell, Richard ; Atanacio, A.J. ; Prince, K.E. ; Musca, Charles ; Dell, John ; Antoszewski, Jarek ; Faraone, Lorenzo. / Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy. COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Lorenzo Faraone ; Sabine Betts ; John Dell ; Charles Musca ; Brett Nener ; Gia Parish ; Justin Wehner. Vol. CD Rom Perth, Western Australia. ed. United States of America : IEEE, Institute of Electrical and Electronics Engineers, 2007. pp. 55-58

@inproceedings{fa6358fb98694a4887b2358081564f23,

title = "Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy",

author = "G.K.O. Tsen and Richard Sewell and A.J. Atanacio and K.E. Prince and Charles Musca and John Dell and Jarek Antoszewski and Lorenzo Faraone",

year = "2007",

language = "English",

isbn = "1424405785",

volume = "CD Rom",

pages = "55--58",

editor = "Lorenzo Faraone and Sabine Betts and John Dell and Charles Musca and Brett Nener and Gia Parish and Justin Wehner",

booktitle = "COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "Perth, Western Australia",

note = "Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy ; Conference date: 01-01-2007",

}

Tsen, GKO, Sewell, R, Atanacio, AJ, Prince, KE, Musca, C, Dell, J , Antoszewski, J & Faraone, L 2007, Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy. in L Faraone, S Betts, J Dell, C Musca, B Nener, G Parish & J Wehner (eds), COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. Perth, Western Australia edn, vol. CD Rom, IEEE, Institute of Electrical and Electronics Engineers, United States of America, pp. 55-58, Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy, 1/01/07.

Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy. / Tsen, G.K.O.; Sewell, Richard; Atanacio, A.J.; Prince, K.E.; Musca, Charles; Dell, John ; Antoszewski, Jarek ; Faraone, Lorenzo.

COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Lorenzo Faraone; Sabine Betts; John Dell; Charles Musca; Brett Nener; Gia Parish; Justin Wehner. Vol. CD Rom Perth, Western Australia. ed. United States of America : IEEE, Institute of Electrical and Electronics Engineers, 2007. p. 55-58.

Research output: Chapter in Book/Conference paper › Conference paper

TY - GEN

T1 - Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy

AU - Tsen, G.K.O.

AU - Sewell, Richard

AU - Atanacio, A.J.

AU - Prince, K.E.

AU - Musca, Charles

AU - Dell, John

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

PY - 2007

Y1 - 2007

M3 - Conference paper

SN - 1424405785

VL - CD Rom

SP - 55

EP - 58

BT - COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Faraone, Lorenzo

A2 - Betts, Sabine

A2 - Dell, John

A2 - Musca, Charles

A2 - Nener, Brett

A2 - Parish, Gia

A2 - Wehner, Justin

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - United States of America

T2 - Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy

Y2 - 1 January 2007

ER -

Tsen GKO, Sewell R, Atanacio AJ, Prince KE, Musca C, Dell J et al. Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy. In Faraone L, Betts S, Dell J, Musca C, Nener B, Parish G, Wehner J, editors, COMMAD '06 Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. Perth, Western Australia ed. Vol. CD Rom. United States of America: IEEE, Institute of Electrical and Electronics Engineers. 2007. p. 55-58