Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

B.A. Park; Charles Musca; Jarek Antoszewski; Tien Nguyen; K.J. Winchester; John Dell; Lorenzo Faraone

Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

B.A. Park, Charles Musca, Jarek Antoszewski, Tien Nguyen, K.J. Winchester, John Dell, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper

Original language	English
Title of host publication	Proceedings of SPIE on Infrared Technology and Applications XXXII
Editors	Bjørn F. Andresen, Gabor F. Fulop, Paul R. Norton
Place of Publication	United States of America
Publisher	SPIE
Pages	62062G-1 -62062G-11
Volume	6206, Part Two of Two Parts
Edition	Kissimmee, Florida, USA
ISBN (Print)	0819462624
Publication status	Published - 2006
Event	Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material - Kissimmee, Florida, USA Duration: 1 Jan 2006 → …

Conference

Conference	Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material
Period	1/01/06 → …

Cite this

Park, B. A., Musca, C., Antoszewski, J., Nguyen, T., Winchester, K. J., Dell, J., & Faraone, L. (2006). Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material. In B. F. Andresen, G. F. Fulop, & P. R. Norton (Eds.), Proceedings of SPIE on Infrared Technology and Applications XXXII (Kissimmee, Florida, USA ed., Vol. 6206, Part Two of Two Parts, pp. 62062G-1 -62062G-11). SPIE.

Park, B.A. ; Musca, Charles ; Antoszewski, Jarek ; Nguyen, Tien ; Winchester, K.J. ; Dell, John ; Faraone, Lorenzo. / Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material. Proceedings of SPIE on Infrared Technology and Applications XXXII. editor / Bjørn F. Andresen ; Gabor F. Fulop ; Paul R. Norton. Vol. 6206, Part Two of Two Parts Kissimmee, Florida, USA. ed. United States of America : SPIE, 2006. pp. 62062G-1 -62062G-11

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title = "Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material",

author = "B.A. Park and Charles Musca and Jarek Antoszewski and Tien Nguyen and K.J. Winchester and John Dell and Lorenzo Faraone",

year = "2006",

language = "English",

isbn = "0819462624",

volume = "6206, Part Two of Two Parts",

pages = "62062G--1 --62062G--11",

editor = "Andresen, {Bj{\o}rn F.} and Fulop, {Gabor F.} and Norton, {Paul R.}",

booktitle = "Proceedings of SPIE on Infrared Technology and Applications XXXII",

publisher = "SPIE",

address = "United States",

edition = "Kissimmee, Florida, USA",

note = "Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material ; Conference date: 01-01-2006",

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Park, BA, Musca, C, Antoszewski, J, Nguyen, T, Winchester, KJ, Dell, J & Faraone, L 2006, Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material. in BF Andresen, GF Fulop & PR Norton (eds), Proceedings of SPIE on Infrared Technology and Applications XXXII. Kissimmee, Florida, USA edn, vol. 6206, Part Two of Two Parts, SPIE, United States of America, pp. 62062G-1 -62062G-11, Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material, 1/01/06.

Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material. / Park, B.A.; Musca, Charles; Antoszewski, Jarek; Nguyen, Tien; Winchester, K.J.; Dell, John ; Faraone, Lorenzo.

Proceedings of SPIE on Infrared Technology and Applications XXXII. ed. / Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton. Vol. 6206, Part Two of Two Parts Kissimmee, Florida, USA. ed. United States of America : SPIE, 2006. p. 62062G-1 -62062G-11.

Research output: Chapter in Book/Conference paper › Conference paper

TY - GEN

T1 - Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

AU - Park, B.A.

AU - Musca, Charles

AU - Antoszewski, Jarek

AU - Nguyen, Tien

AU - Winchester, K.J.

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2006

Y1 - 2006

M3 - Conference paper

SN - 0819462624

VL - 6206, Part Two of Two Parts

SP - 62062G-1 -62062G-11

BT - Proceedings of SPIE on Infrared Technology and Applications XXXII

A2 - Andresen, Bjørn F.

A2 - Fulop, Gabor F.

A2 - Norton, Paul R.

PB - SPIE

CY - United States of America

T2 - Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

Y2 - 1 January 2006

ER -

Park BA, Musca C, Antoszewski J, Nguyen T, Winchester KJ, Dell J et al. Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material. In Andresen BF, Fulop GF, Norton PR, editors, Proceedings of SPIE on Infrared Technology and Applications XXXII. Kissimmee, Florida, USA ed. Vol. 6206, Part Two of Two Parts. United States of America: SPIE. 2006. p. 62062G-1 -62062G-11