Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs

P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

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