Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs

P. N. Brunkov; V. V. Chaldyshev; A. V. Chernigovskii; A. A. Suvorova; N. A. Bert; S. G. Konnikov; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin

Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs

P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Abstract

Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers. As a result of the majority carrier accumulation, a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equation showed the concentration of accumulated charge carriers to be as high as ≃ 1 × 10¹² cm^-2 which is comparable with concentration of As clusters determined from transmission electron microscopy study.

Original language	English
Title of host publication	Proceedings of the 8th International Symposium Nanostructures
Subtitle of host publication	Physics and Technology
Editors	Zh. alferov, L. Esaki, ZH. Alferov, L. Esaki
Pages	291-294
Number of pages	4
Publication status	Published - 2000
Externally published	Yes
Event	Proceedings of the 8th International Symposium Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: 19 Jun 2000 → 23 Jun 2000

Publication series

Name	Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

Conference

Conference	Proceedings of the 8th International Symposium Nanostructures: Physics and Technology
Country/Territory	Russian Federation
City	St. Petersburg
Period	19/06/00 → 23/06/00

Cite this

Brunkov, P. N., Chaldyshev, V. V., Chernigovskii, A. V., Suvorova, A. A., Bert, N. A., Konnikov, S. G., Preobrazhenskii, V. V., Putyato, M. A., & Semyagin, B. R. (2000). Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs. In Z. alferov, L. Esaki, ZH. Alferov, & L. Esaki (Eds.), Proceedings of the 8th International Symposium Nanostructures: Physics and Technology (pp. 291-294). (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

Brunkov, P. N. ; Chaldyshev, V. V. ; Chernigovskii, A. V. et al. / Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. editor / Zh. alferov ; L. Esaki ; ZH. Alferov ; L. Esaki. 2000. pp. 291-294 (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

@inproceedings{6699b68455a54bf18342593e81b9255d,

title = "Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs",

abstract = "Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers. As a result of the majority carrier accumulation, a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equation showed the concentration of accumulated charge carriers to be as high as ≃ 1 × 1012 cm-2 which is comparable with concentration of As clusters determined from transmission electron microscopy study.",

author = "Brunkov, {P. N.} and Chaldyshev, {V. V.} and Chernigovskii, {A. V.} and Suvorova, {A. A.} and Bert, {N. A.} and Konnikov, {S. G.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.}",

year = "2000",

language = "English",

isbn = "5936340023",

series = "Proceedings of the 8th International Symposium Nanostructures: Physics and Technology",

pages = "291--294",

editor = "Zh. alferov and L. Esaki and ZH. Alferov and L. Esaki",

booktitle = "Proceedings of the 8th International Symposium Nanostructures",

note = "Proceedings of the 8th International Symposium Nanostructures: Physics and Technology ; Conference date: 19-06-2000 Through 23-06-2000",

}

Brunkov, PN, Chaldyshev, VV, Chernigovskii, AV, Suvorova, AA, Bert, NA, Konnikov, SG, Preobrazhenskii, VV, Putyato, MA & Semyagin, BR 2000, Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs. in Z alferov, L Esaki, ZH Alferov & L Esaki (eds), Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, pp. 291-294, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, St. Petersburg, Russian Federation, 19/06/00.

Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs. / Brunkov, P. N.; Chaldyshev, V. V.; Chernigovskii, A. V. et al.
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. ed. / Zh. alferov; L. Esaki; ZH. Alferov; L. Esaki. 2000. p. 291-294 (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs

AU - Brunkov, P. N.

AU - Chaldyshev, V. V.

AU - Chernigovskii, A. V.

AU - Suvorova, A. A.

AU - Bert, N. A.

AU - Konnikov, S. G.

AU - Preobrazhenskii, V. V.

AU - Putyato, M. A.

AU - Semyagin, B. R.

PY - 2000

Y1 - 2000

N2 - Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers. As a result of the majority carrier accumulation, a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equation showed the concentration of accumulated charge carriers to be as high as ≃ 1 × 1012 cm-2 which is comparable with concentration of As clusters determined from transmission electron microscopy study.

AB - Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers. As a result of the majority carrier accumulation, a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equation showed the concentration of accumulated charge carriers to be as high as ≃ 1 × 1012 cm-2 which is comparable with concentration of As clusters determined from transmission electron microscopy study.

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M3 - Conference paper

AN - SCOPUS:0034594232

SN - 5936340023

T3 - Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

SP - 291

EP - 294

BT - Proceedings of the 8th International Symposium Nanostructures

A2 - alferov, Zh.

A2 - Esaki, L.

A2 - Alferov, ZH.

A2 - Esaki, L.

T2 - Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

Y2 - 19 June 2000 through 23 June 2000

ER -

Brunkov PN, Chaldyshev VV, Chernigovskii AV, Suvorova AA, Bert NA, Konnikov SG et al. Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs. In alferov Z, Esaki L, Alferov ZH, Esaki L, editors, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. 2000. p. 291-294. (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

Carrier accumulation due to insertion of nanoscale As clusters into n- and p-type GaAs

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