Capacitance spectroscopy of thin GaAs layers grown by molecular beam epitaxy at low temperatures

V. V. Chaldyshev; P. N. Brounkov; A. A. Suvorova; S. G. Konnikov; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin

doi:10.4028/www.scientific.net/ssp.57-58.495

Capacitance spectroscopy of thin GaAs layers grown by molecular beam epitaxy at low temperatures

V. V. Chaldyshev, P. N. Brounkov, A. A. Suvorova, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Research output: Contribution to journal › Article › peer-review

Abstract

Capacitance - voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/ LT-GaAs/ n-GaAs sandwich structures. The characteristics were found to be step-like with a wide plateau originated from electron emission by different traps. Two types of the emitting traps were revealed. The one of them can be attributed to deep levels in LT-GaAs layers, namely EB4 and EL3. The other can be attributed to arsenic clusters supposing that each cluster can emit (or capture) one electron.

Original language	English
Pages (from-to)	495-500
Number of pages	6
Journal	Solid State Phenomena
Volume	57-58
DOIs	https://doi.org/10.4028/www.scientific.net/ssp.57-58.495
Publication status	Published - 1997
Externally published	Yes

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title = "Capacitance spectroscopy of thin GaAs layers grown by molecular beam epitaxy at low temperatures",

abstract = "Capacitance - voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/ LT-GaAs/ n-GaAs sandwich structures. The characteristics were found to be step-like with a wide plateau originated from electron emission by different traps. Two types of the emitting traps were revealed. The one of them can be attributed to deep levels in LT-GaAs layers, namely EB4 and EL3. The other can be attributed to arsenic clusters supposing that each cluster can emit (or capture) one electron.",

keywords = "Capacitance Spectroscopy, Lt-GaAs",

author = "Chaldyshev, {V. V.} and Brounkov, {P. N.} and Suvorova, {A. A.} and Konnikov, {S. G.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.}",

year = "1997",

doi = "10.4028/www.scientific.net/ssp.57-58.495",

language = "English",

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T1 - Capacitance spectroscopy of thin GaAs layers grown by molecular beam epitaxy at low temperatures

AU - Chaldyshev, V. V.

AU - Brounkov, P. N.

AU - Suvorova, A. A.

AU - Konnikov, S. G.

AU - Preobrazhenskii, V. V.

AU - Putyato, M. A.

AU - Semyagin, B. R.

PY - 1997

Y1 - 1997

N2 - Capacitance - voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/ LT-GaAs/ n-GaAs sandwich structures. The characteristics were found to be step-like with a wide plateau originated from electron emission by different traps. Two types of the emitting traps were revealed. The one of them can be attributed to deep levels in LT-GaAs layers, namely EB4 and EL3. The other can be attributed to arsenic clusters supposing that each cluster can emit (or capture) one electron.

AB - Capacitance - voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/ LT-GaAs/ n-GaAs sandwich structures. The characteristics were found to be step-like with a wide plateau originated from electron emission by different traps. Two types of the emitting traps were revealed. The one of them can be attributed to deep levels in LT-GaAs layers, namely EB4 and EL3. The other can be attributed to arsenic clusters supposing that each cluster can emit (or capture) one electron.

KW - Capacitance Spectroscopy

KW - Lt-GaAs

UR - http://www.scopus.com/inward/record.url?scp=16944366180&partnerID=8YFLogxK

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SN - 1012-0394

VL - 57-58

SP - 495

EP - 500

JO - Solid State Phenomena

JF - Solid State Phenomena

ER -

Capacitance spectroscopy of thin GaAs layers grown by molecular beam epitaxy at low temperatures

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