Calculation of the internal electric field within doped semiconductors

Gordon Phelps

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	6pp
Journal	Semiconductor Science and Technology
Volume	27
DOIs	https://doi.org/10.1088/0268-1242/27/3/035013
Publication status	Published - 2012

Access to Document

@article{28aab20c279542b5b630d5a34dbae268,

title = "Calculation of the internal electric field within doped semiconductors",

author = "Gordon Phelps",

year = "2012",

doi = "10.1088/0268-1242/27/3/035013",

language = "English",

volume = "27",

pages = "6pp",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

}