Boron nitride nanostructures

Weike Zhang; Sehrina Eshon; Hui Tong Chua

Boron nitride nanostructures

Weike Zhang (Inventor)
, Sehrina Eshon (Inventor)
, Hui Tong Chua (Inventor)

Research output: Patent › peer-review

Abstract

The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment.

Original language	English
Patent number	AU 2019/379425 B2
IPC	B82Y30/00,B82Y40/00,C01B21/064,C01B35/14
Priority date	16/11/18
Filing date	15/11/19
Publication status	Published - 12 Sept 2024

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title = "Boron nitride nanostructures",

abstract = "The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment.",

author = "Weike Zhang and Sehrina Eshon and Chua, \{Hui Tong\}",

year = "2024",

month = sep,

day = "12",

language = "English",

type = "Patent",

note = "AU 2019/379425 B2; B82Y30/00,B82Y40/00,C01B21/064,C01B35/14",

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TY - PAT

T1 - Boron nitride nanostructures

AU - Zhang, Weike

AU - Eshon, Sehrina

AU - Chua, Hui Tong

PY - 2024/9/12

Y1 - 2024/9/12

N2 - The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment.

AB - The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment.

M3 - Patent

M1 - AU 2019/379425 B2

Y2 - 2019/11/15

ER -

Boron nitride nanostructures

Abstract

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