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Abstract
The present invention provides a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment.
It has now been found that subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment surprisingly produces a variety of boron nitride nanostructures. Nanostructures identified include nano-platelets, exfoliated nano-sheets, nano horns, nano-rods and nano-onions.
Surprisingly, the method according to the invention is particularly well suited to producing nano-onion structures.
Lamp ablation uses high flux bright light to irradiate precursor materials to achieve reactions that are not attainable in conventional ovens or alternative pathways.
In one embodiment, the adiabatic radiative shielding environment is in the form of a vessel made from material comprising fused quartz.
In a further embodiment, the vessel is hermetically sealed and has two or more layers of material that are each spaced apart and each hermetically sealed.
In another embodiment, the vessel is in the form of a tube or ampoule.
In yet another embodiment, the nanostructures produced comprise nano-onion structures.
In a further embodiment, the nanostructures produced are crystalline.
In yet a further embodiment, the nanostructures produced comprise at least 50wt%, or at least 60wt%, or at least 70wt%, or at least 80wt%, or at least 90wt%, or at least 95wt%, nano-onion structures.
The method according to the invention is advantageously not complex to perform, is scalable and is environmentally friendly in that it only requires the use of lamp ablation.
It has now been found that subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment surprisingly produces a variety of boron nitride nanostructures. Nanostructures identified include nano-platelets, exfoliated nano-sheets, nano horns, nano-rods and nano-onions.
Surprisingly, the method according to the invention is particularly well suited to producing nano-onion structures.
Lamp ablation uses high flux bright light to irradiate precursor materials to achieve reactions that are not attainable in conventional ovens or alternative pathways.
In one embodiment, the adiabatic radiative shielding environment is in the form of a vessel made from material comprising fused quartz.
In a further embodiment, the vessel is hermetically sealed and has two or more layers of material that are each spaced apart and each hermetically sealed.
In another embodiment, the vessel is in the form of a tube or ampoule.
In yet another embodiment, the nanostructures produced comprise nano-onion structures.
In a further embodiment, the nanostructures produced are crystalline.
In yet a further embodiment, the nanostructures produced comprise at least 50wt%, or at least 60wt%, or at least 70wt%, or at least 80wt%, or at least 90wt%, or at least 95wt%, nano-onion structures.
The method according to the invention is advantageously not complex to perform, is scalable and is environmentally friendly in that it only requires the use of lamp ablation.
| Original language | English |
|---|---|
| Patent number | 283188 |
| IPC | C01B 21/064,B01J 19/08,B82Y 30/00,B82Y 40/00 |
| Priority date | 16/11/18 |
| Filing date | 15/11/19 |
| Publication status | Published - 2 Dec 2024 |
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BORON NITRIDE NANOSTRUCTURES
Eshon, S. (Inventor), Chua, H. T. (Inventor) & Zhang, W. (Inventor), 13 Aug 2024, IPC No. C01B21/064, B82Y40/00, United States Patent and Trademark Office, Patent No. US 12060267 B2, 15 Nov 2019, Priority date 16 Nov 2018, Priority No. AU 2018904384 AResearch output: Patent › peer-review
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