BORON NITRIDE NANOSTRUCTURES

Sehrina Eshon; Hui Tong Chua; Weike Zhang

BORON NITRIDE NANOSTRUCTURES

Sehrina Eshon (Inventor), Hui Tong Chua (Inventor), Weike Zhang (Inventor)

Research output: Patent › peer-review

Abstract

The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.

Original language	English
Patent number	US 12060267 B2
IPC	C01B21/064,B82Y40/00
Priority date	16/11/18
Filing date	15/11/19
Publication status	Published - 13 Aug 2024

Cite this

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title = "BORON NITRIDE NANOSTRUCTURES",

abstract = "The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.",

author = "Sehrina Eshon and Chua, {Hui Tong} and Weike Zhang",

year = "2024",

month = aug,

day = "13",

language = "English",

publisher = "United States Patent and Trademark Office",

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type = "Patent",

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TY - PAT

T1 - BORON NITRIDE NANOSTRUCTURES

AU - Eshon, Sehrina

AU - Chua, Hui Tong

AU - Zhang, Weike

PY - 2024/8/13

Y1 - 2024/8/13

N2 - The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.

AB - The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.

UR - https://www.lens.org/lens/patent/115-754-373-343-390/frontpage?l=en

M3 - Patent

M1 - US 12060267 B2

Y2 - 2019/11/15

PB - United States Patent and Trademark Office

ER -

BORON NITRIDE NANOSTRUCTURES

Abstract

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