Bistability of charge accumulated in low-temperature-grown GaAs

P. N. Brounkov; V. V. Chaldyshev; A. A. Suvorova; N. A. Bert; S. G. Konnikov; A. V. Chernigovskii; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin

doi:10.1063/1.122593

Bistability of charge accumulated in low-temperature-grown GaAs

P. N. Brounkov, V. V. Chaldyshev, A. A. Suvorova, N. A. Bert, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

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Abstract

Capacitance-voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/low-temperature-grown (LT)-GaAs/n-GaAs sandwich structures. Charge accumulation at deep traps in the LT-GaAs layer was observed. At room temperature, the C-V characteristics were found to be step-like with a wide plateau originated from emission of electrons accumulated in the LT-GaAs layer. At the temperature below 100 K, the electron emission from the LT-GaAs layer was completely suppressed. At intermediate temperatures (150-200 K), an effect of charge bistability was observed, which manifested itself as a hysteresis in the capacitance under sweeping the reverse dc bias. We suppose that the phenomenon takes place when the sweeping rate is higher than the electron emission rate but lower than the electron capture rate by the deep traps in the LT-GaAs layer.

Original language	English
Pages (from-to)	2796-2798
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	19
DOIs	https://doi.org/10.1063/1.122593
Publication status	Published - 1998
Externally published	Yes

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@article{09b6786ef1b24ea48bc8f96974d17751,

title = "Bistability of charge accumulated in low-temperature-grown GaAs",

abstract = "Capacitance-voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/low-temperature-grown (LT)-GaAs/n-GaAs sandwich structures. Charge accumulation at deep traps in the LT-GaAs layer was observed. At room temperature, the C-V characteristics were found to be step-like with a wide plateau originated from emission of electrons accumulated in the LT-GaAs layer. At the temperature below 100 K, the electron emission from the LT-GaAs layer was completely suppressed. At intermediate temperatures (150-200 K), an effect of charge bistability was observed, which manifested itself as a hysteresis in the capacitance under sweeping the reverse dc bias. We suppose that the phenomenon takes place when the sweeping rate is higher than the electron emission rate but lower than the electron capture rate by the deep traps in the LT-GaAs layer.",

author = "Brounkov, {P. N.} and Chaldyshev, {V. V.} and Suvorova, {A. A.} and Bert, {N. A.} and Konnikov, {S. G.} and Chernigovskii, {A. V.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.}",

year = "1998",

doi = "10.1063/1.122593",

language = "English",

volume = "73",

pages = "2796--2798",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Bistability of charge accumulated in low-temperature-grown GaAs

AU - Brounkov, P. N.

AU - Chaldyshev, V. V.

AU - Suvorova, A. A.

AU - Bert, N. A.

AU - Konnikov, S. G.

AU - Chernigovskii, A. V.

AU - Preobrazhenskii, V. V.

AU - Putyato, M. A.

AU - Semyagin, B. R.

PY - 1998

Y1 - 1998

N2 - Capacitance-voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/low-temperature-grown (LT)-GaAs/n-GaAs sandwich structures. Charge accumulation at deep traps in the LT-GaAs layer was observed. At room temperature, the C-V characteristics were found to be step-like with a wide plateau originated from emission of electrons accumulated in the LT-GaAs layer. At the temperature below 100 K, the electron emission from the LT-GaAs layer was completely suppressed. At intermediate temperatures (150-200 K), an effect of charge bistability was observed, which manifested itself as a hysteresis in the capacitance under sweeping the reverse dc bias. We suppose that the phenomenon takes place when the sweeping rate is higher than the electron emission rate but lower than the electron capture rate by the deep traps in the LT-GaAs layer.

AB - Capacitance-voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/low-temperature-grown (LT)-GaAs/n-GaAs sandwich structures. Charge accumulation at deep traps in the LT-GaAs layer was observed. At room temperature, the C-V characteristics were found to be step-like with a wide plateau originated from emission of electrons accumulated in the LT-GaAs layer. At the temperature below 100 K, the electron emission from the LT-GaAs layer was completely suppressed. At intermediate temperatures (150-200 K), an effect of charge bistability was observed, which manifested itself as a hysteresis in the capacitance under sweeping the reverse dc bias. We suppose that the phenomenon takes place when the sweeping rate is higher than the electron emission rate but lower than the electron capture rate by the deep traps in the LT-GaAs layer.

UR - http://www.scopus.com/inward/record.url?scp=0000314748&partnerID=8YFLogxK

U2 - 10.1063/1.122593

DO - 10.1063/1.122593

M3 - Article

AN - SCOPUS:0000314748

VL - 73

SP - 2796

EP - 2798

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -

Bistability of charge accumulated in low-temperature-grown GaAs

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