Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

Bing Yan, Xiren Chen, Liangqing Zhu, Wenwu Pan, Lijuan Wang, Li Yue, Xiaolei Zhang, Li Han, Feng Liu, Shumin Wang, Jun Shao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect the performance of optoelectronic applications, and are hence a well-concerned issue. Dilute-Bi GaAs is considered very competitive though the role of Bi is yet to be well clarified. We in this letter investigate the effect of Bi incorporation on the band-tail states in GaAs 1− x Bi x by excitation power- and magnetic field-dependent photoluminescence (PL) measurements at low temperatures. Three PL features are identified from a broad PL peak, which blue-shift monotonically with the increase in excitation power. None of the PL features correlate with single Bi-content free-exciton recombination, and band-tail filling rather than the donor-acceptor pair process is responsible for the power-induced blueshift. The density of band-tail states gets enhanced with the increase in the Bi incorporation level and affects the determination of Bi-induced bandgap reduction. The results indicate that joint analysis of excitation- and magneto-PL may serve as a good probe for band-tail states in semiconductors.

Original languageEnglish
Article number052104
JournalApplied Physics Letters
Volume114
Issue number5
DOIs
Publication statusPublished - 4 Feb 2019
Externally publishedYes

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