Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

Bing Yan, Xiren Chen, Liangqing Zhu, Wenwu Pan, Lijuan Wang, Li Yue, Xiaolei Zhang, Li Han, Feng Liu, Shumin Wang, Jun Shao

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4 Citations (Scopus)


Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect the performance of optoelectronic applications, and are hence a well-concerned issue. Dilute-Bi GaAs is considered very competitive though the role of Bi is yet to be well clarified. We in this letter investigate the effect of Bi incorporation on the band-tail states in GaAs 1− x Bi x by excitation power- and magnetic field-dependent photoluminescence (PL) measurements at low temperatures. Three PL features are identified from a broad PL peak, which blue-shift monotonically with the increase in excitation power. None of the PL features correlate with single Bi-content free-exciton recombination, and band-tail filling rather than the donor-acceptor pair process is responsible for the power-induced blueshift. The density of band-tail states gets enhanced with the increase in the Bi incorporation level and affects the determination of Bi-induced bandgap reduction. The results indicate that joint analysis of excitation- and magneto-PL may serve as a good probe for band-tail states in semiconductors.

Original languageEnglish
Article number052104
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 4 Feb 2019
Externally publishedYes

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