Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model

Chang Wang; Wenwu Pan; Konstantin Kolokolov; Shumin Wang

doi:10.1088/0256-307X/35/5/057801

Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model

Chang Wang
, Wenwu Pan
, Konstantin Kolokolov
, Shumin Wang

Research output: Contribution to journal › Article › peer-review

5 Citations (Web of Science)

Abstract

Not Available Supported by the National Basic Research Program of China under Grant No 2014CB643902, the Key Program of Natural Science Foundation of China under Grant No 61334004, the National Natural Science Foundation of China under Grant No 61404152, and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA5-1, the Foundation of National Laboratory for Infrared Physics, the Key Research Program of the Chinese Academy of Sciences under Grant No KGZD-EW-804, and the Creative Research Group Project of Natural Science Foundation of China under Grant No 61321492.

Original language	English
Article number	057801
Journal	Chinese Physics Letters
Volume	35
Issue number	5
DOIs	https://doi.org/10.1088/0256-307X/35/5/057801
Publication status	Published - 1 May 2018
Externally published	Yes

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title = "Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model",

abstract = "Not Available Supported by the National Basic Research Program of China under Grant No 2014CB643902, the Key Program of Natural Science Foundation of China under Grant No 61334004, the National Natural Science Foundation of China under Grant No 61404152, and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA5-1, the Foundation of National Laboratory for Infrared Physics, the Key Research Program of the Chinese Academy of Sciences under Grant No KGZD-EW-804, and the Creative Research Group Project of Natural Science Foundation of China under Grant No 61321492.",

author = "Chang Wang and Wenwu Pan and Konstantin Kolokolov and Shumin Wang",

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T1 - Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model

AU - Wang, Chang

AU - Pan, Wenwu

AU - Kolokolov, Konstantin

AU - Wang, Shumin

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Not Available Supported by the National Basic Research Program of China under Grant No 2014CB643902, the Key Program of Natural Science Foundation of China under Grant No 61334004, the National Natural Science Foundation of China under Grant No 61404152, and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA5-1, the Foundation of National Laboratory for Infrared Physics, the Key Research Program of the Chinese Academy of Sciences under Grant No KGZD-EW-804, and the Creative Research Group Project of Natural Science Foundation of China under Grant No 61321492.

AB - Not Available Supported by the National Basic Research Program of China under Grant No 2014CB643902, the Key Program of Natural Science Foundation of China under Grant No 61334004, the National Natural Science Foundation of China under Grant No 61404152, and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA5-1, the Foundation of National Laboratory for Infrared Physics, the Key Research Program of the Chinese Academy of Sciences under Grant No KGZD-EW-804, and the Creative Research Group Project of Natural Science Foundation of China under Grant No 61321492.

U2 - 10.1088/0256-307X/35/5/057801

DO - 10.1088/0256-307X/35/5/057801

M3 - Article

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JO - Chinese Physics Letters

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ER -

Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model

Abstract

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