Atomistic Modelling of p-channel Junctionless Silicon Nanowire Transistor: k.p approach

    Research output: Chapter in Book/Conference paperConference paper

    Abstract

    © 2014 IEEE. The influence of impurity doping distribution in the channel region of p-type silicon nanowire FET has been studied using atomistic three-dimensional quantum simulator based on non-equilibrium Green's function formalism. The valence band has been modeled using a 6-band k.p Hamiltonian. Carrier transport has been treated in the coupled mode-space which considerably reduces the simulation time compare to real-space approach without losing the accuracy. We consider a FET with 10-nm gate length, 5×5 nm2 cross-section and different doping densities.
    Original languageEnglish
    Title of host publicationProceedings of the 2014 International Conference on Nanoscience and Nanotechnology (ICONN)
    Place of PublicationUnited States of America
    PublisherIEEE, Institute of Electrical and Electronics Engineers
    Pages17-20
    Volume1
    ISBN (Print)9781479935215
    DOIs
    Publication statusPublished - 2014
    Event2014 International Conference on Nanoscience and Nanotechnology - Adelaide, Australia
    Duration: 2 Feb 20146 Feb 2014

    Conference

    Conference2014 International Conference on Nanoscience and Nanotechnology
    CountryAustralia
    CityAdelaide
    Period2/02/146/02/14

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