Atomic scale modeling of electrically doped p-i-n FET from adenine based single wall nanotube

Engineering

• Field-Effect Transistor 100%
• Tunneling 40%
• Nanoelectronics 40%
• Greens Function 20%
• Present Result 20%
• Room Temperature 20%
• Nanoscale 20%
• Electric Potential 20%
• Nonequilibrium 20%
• Basis Function 20%
• Future Generation 20%
• Molecular Field 20%
• Lowest Unoccupied Molecular Orbital 20%
• Highest Occupied Molecular Orbital 20%
• Channel Conductance 20%
• Current Channel 20%
• Atomic Scale Modeling 20%

Physics

• Field Effect Transistors 100%
• Nanotubes 60%
• Ballistics 60%
• Adenine 40%
• Green's Functions 20%
• Room Temperature 20%
• Electric Potential 20%
• Density Functional Theory 20%
• Nanoscale 20%
• First-Principles 20%
• Coherent Radiation 20%
• Hilbert Spaces 20%

Material Science

• Current Voltage Characteristics 40%
• Electronic Property 20%
• Nanotube Based Device 20%