Atomic scale modeling of electrically doped p-i-n FET from adenine based single wall nanotube

Debarati Dey, Pradipta Roy, Debashis De

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The Field Effect Transistor (FET) characteristics has been observed from a single-walled Adenine nanotube device using Density Functional Theory associated with Non Equilibrium Green's Function based First Principle approach. This device is electrically doped which shows both n and p channel characteristics of a p-i-n FET. This device is designed and originated from a single-walled biomolecular nanotube structure. The p and n regions have been induced at the two ends of the device using electrical doping process. Thus both n and p channel current-voltage response can be obtained within a single nano-scale device at room temperature operation. The device is 3.35 nm long and 1.4 nm wide. The quasi-ballistic quantum transmission property reveals impressive and almost ideal current-voltage characteristics of the FET. Highest Occupied Molecular Orbital (HOMO) and Lowest Unoccupied Molecular Orbital (LUMO) gap reveals the possibility of quasi-ballistic coherent transmission of the device. The electronic properties based on Molecular Projected Self-consistent Hamiltonian are analyzed using Hilbert space spanned basis functions. The maximum tunneling current observed for the bio-molecular FET is 15.9 μA for n-channel and 13.8 μA for p-channel. The device is operated in atomic scale regime with 1000 THz frequency. The present results reveal the role of quantum-ballistic tunneling phenomenon in the current-voltage characteristics and channel conductance properties of the bio nanotube structure, which is useful in future generation nano-electronics.

    Original languageEnglish
    Pages (from-to)118-127
    Number of pages10
    JournalJournal of Molecular Graphics and Modelling
    Volume76
    Early online date10 Jul 2017
    DOIs
    Publication statusPublished - 1 Sep 2017

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    adenines
    Adenine
    Field effect transistors
    Nanotubes
    nanotubes
    field effect transistors
    Ballistics
    Molecular orbitals
    Current voltage characteristics
    ballistics
    Hamiltonians
    Nanoelectronics
    Hilbert spaces
    Green's function
    Electronic properties
    Density functional theory
    molecular orbitals
    electric potential
    space bases
    Doping (additives)

    Cite this

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    abstract = "The Field Effect Transistor (FET) characteristics has been observed from a single-walled Adenine nanotube device using Density Functional Theory associated with Non Equilibrium Green's Function based First Principle approach. This device is electrically doped which shows both n and p channel characteristics of a p-i-n FET. This device is designed and originated from a single-walled biomolecular nanotube structure. The p and n regions have been induced at the two ends of the device using electrical doping process. Thus both n and p channel current-voltage response can be obtained within a single nano-scale device at room temperature operation. The device is 3.35 nm long and 1.4 nm wide. The quasi-ballistic quantum transmission property reveals impressive and almost ideal current-voltage characteristics of the FET. Highest Occupied Molecular Orbital (HOMO) and Lowest Unoccupied Molecular Orbital (LUMO) gap reveals the possibility of quasi-ballistic coherent transmission of the device. The electronic properties based on Molecular Projected Self-consistent Hamiltonian are analyzed using Hilbert space spanned basis functions. The maximum tunneling current observed for the bio-molecular FET is 15.9 μA for n-channel and 13.8 μA for p-channel. The device is operated in atomic scale regime with 1000 THz frequency. The present results reveal the role of quantum-ballistic tunneling phenomenon in the current-voltage characteristics and channel conductance properties of the bio nanotube structure, which is useful in future generation nano-electronics.",
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    Atomic scale modeling of electrically doped p-i-n FET from adenine based single wall nanotube. / Dey, Debarati; Roy, Pradipta; De, Debashis.

    In: Journal of Molecular Graphics and Modelling, Vol. 76, 01.09.2017, p. 118-127.

    Research output: Contribution to journalArticle

    TY - JOUR

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    AU - Dey, Debarati

    AU - Roy, Pradipta

    AU - De, Debashis

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    AB - The Field Effect Transistor (FET) characteristics has been observed from a single-walled Adenine nanotube device using Density Functional Theory associated with Non Equilibrium Green's Function based First Principle approach. This device is electrically doped which shows both n and p channel characteristics of a p-i-n FET. This device is designed and originated from a single-walled biomolecular nanotube structure. The p and n regions have been induced at the two ends of the device using electrical doping process. Thus both n and p channel current-voltage response can be obtained within a single nano-scale device at room temperature operation. The device is 3.35 nm long and 1.4 nm wide. The quasi-ballistic quantum transmission property reveals impressive and almost ideal current-voltage characteristics of the FET. Highest Occupied Molecular Orbital (HOMO) and Lowest Unoccupied Molecular Orbital (LUMO) gap reveals the possibility of quasi-ballistic coherent transmission of the device. The electronic properties based on Molecular Projected Self-consistent Hamiltonian are analyzed using Hilbert space spanned basis functions. The maximum tunneling current observed for the bio-molecular FET is 15.9 μA for n-channel and 13.8 μA for p-channel. The device is operated in atomic scale regime with 1000 THz frequency. The present results reveal the role of quantum-ballistic tunneling phenomenon in the current-voltage characteristics and channel conductance properties of the bio nanotube structure, which is useful in future generation nano-electronics.

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