Atom Probe Tomography Studies of GaN-Based Semiconductor Materials

S. Bennett; R.A. Oliver; David Saxey; A. Cerezo; P.H. Clifton; R.M. Ulfig; M.J. Kappers; C.J. Humphreys

doi:10.1017/S1431927609097979

Atom Probe Tomography Studies of GaN-Based Semiconductor Materials

S. Bennett, R.A. Oliver, David Saxey, A. Cerezo, P.H. Clifton, R.M. Ulfig, M.J. Kappers, C.J. Humphreys

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper

1 Citation (Scopus)

Original language	English
Title of host publication	Microscopy and Microanalysis 2009
Place of Publication	Cambridge, UK
Publisher	Cambridge University Press
Pages	280-281
Volume	15 S02
ISBN (Print)	14319276
DOIs	https://doi.org/10.1017/S1431927609097979
Publication status	Published - 2009
Event	Atom Probe Tomography Studies of GaN-Based Semiconductor Materials - Richmond Virginia, USA Duration: 1 Jan 2009 → …

Conference

Conference	Atom Probe Tomography Studies of GaN-Based Semiconductor Materials
Period	1/01/09 → …

Access to Document

10.1017/S1431927609097979

Cite this

@inproceedings{cb45d82b7acb4ab68614653cf75d7c2a,

title = "Atom Probe Tomography Studies of GaN-Based Semiconductor Materials",

author = "S. Bennett and R.A. Oliver and David Saxey and A. Cerezo and P.H. Clifton and R.M. Ulfig and M.J. Kappers and C.J. Humphreys",

year = "2009",

doi = "10.1017/S1431927609097979",

language = "English",

isbn = "14319276",

volume = "15 S02",

pages = "280--281",

booktitle = "Microscopy and Microanalysis 2009",

publisher = "Cambridge University Press",

address = "United Kingdom",

note = "Atom Probe Tomography Studies of GaN-Based Semiconductor Materials ; Conference date: 01-01-2009",

}

Bennett, S, Oliver, RA, Saxey, D, Cerezo, A, Clifton, PH, Ulfig, RM, Kappers, MJ & Humphreys, CJ 2009, Atom Probe Tomography Studies of GaN-Based Semiconductor Materials. in Microscopy and Microanalysis 2009. vol. 15 S02, Cambridge University Press, Cambridge, UK, pp. 280-281, Atom Probe Tomography Studies of GaN-Based Semiconductor Materials, 1/01/09. https://doi.org/10.1017/S1431927609097979

TY - GEN

T1 - Atom Probe Tomography Studies of GaN-Based Semiconductor Materials

AU - Bennett, S.

AU - Oliver, R.A.

AU - Saxey, David

AU - Cerezo, A.

AU - Clifton, P.H.

AU - Ulfig, R.M.

AU - Kappers, M.J.

AU - Humphreys, C.J.

PY - 2009

Y1 - 2009

U2 - 10.1017/S1431927609097979

DO - 10.1017/S1431927609097979

M3 - Conference paper

SN - 14319276

VL - 15 S02

SP - 280

EP - 281

BT - Microscopy and Microanalysis 2009

PB - Cambridge University Press

CY - Cambridge, UK

T2 - Atom Probe Tomography Studies of GaN-Based Semiconductor Materials

Y2 - 1 January 2009

ER -