Arsenic delta-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy

Gordon Tsen, Charles Musca, John Dell, Jarek Antoszewski, Lorenzo Faraone, C.R. Becker

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Abstract

Arsenic incorporation in HgTe/Hg0.05Cd0.95Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a δ-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm.
Original languageEnglish
Pages (from-to)082107-1-082107-3
JournalApplied Physics Letters
Volume92
Issue number8
DOIs
Publication statusPublished - 2008

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