Anomalous photoluminescence in InP1-xBix

Xiaoyan Wu; Xiren Chen; Wenwu Pan; Peng Wang; Liyao Zhang; Yaoyao Li; Hailong Wang; Kai Wang; Jun Shao; Shumin Wang

doi:10.1038/srep27867

Anomalous photoluminescence in InP1-xBix

Xiaoyan Wu
, Xiren Chen
, Wenwu Pan
, Peng Wang
, Liyao Zhang
, Yaoyao Li
, Hailong Wang
, Kai Wang
, Jun Shao
, Shumin Wang

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).

Original language	English
Article number	27867
Pages (from-to)	27867
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep27867
Publication status	Published - 13 Jun 2016
Externally published	Yes

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10.1038/srep27867Licence: CC BY

http://adsabs.harvard.edu/abs/2016NatSR...627867W

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title = "Anomalous photoluminescence in InP1-xBix",

abstract = "Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49\% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).",

author = "Xiaoyan Wu and Xiren Chen and Wenwu Pan and Peng Wang and Liyao Zhang and Yaoyao Li and Hailong Wang and Kai Wang and Jun Shao and Shumin Wang",

year = "2016",

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doi = "10.1038/srep27867",

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T1 - Anomalous photoluminescence in InP1-xBix

AU - Wu, Xiaoyan

AU - Chen, Xiren

AU - Pan, Wenwu

AU - Wang, Peng

AU - Zhang, Liyao

AU - Li, Yaoyao

AU - Wang, Hailong

AU - Wang, Kai

AU - Shao, Jun

AU - Wang, Shumin

PY - 2016/6/13

Y1 - 2016/6/13

N2 - Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).

AB - Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).

U2 - 10.1038/srep27867

DO - 10.1038/srep27867

M3 - Article

SN - 2045-2322

VL - 6

SP - 27867

JO - Scientific Reports

JF - Scientific Reports

M1 - 27867

ER -

Anomalous photoluminescence in InP1-xBix

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