| Original language | English |
|---|---|
| Pages (from-to) | 2354-2357 |
| Journal | Journal of Applied Physics |
| Volume | 74 |
| Issue number | 3 |
| Publication status | Published - 1994 |
Annealing Behaviour of Deep-Level Defects in 1MeV Electron Irradiated GaAs
S.T. Lai, Brett Nener
Research output: Contribution to journal › Article › peer-review