Annealing Behaviour of Deep-Level Defects in 1MeV Electron Irradiated GaAs

S.T. Lai, Brett Nener

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)2354-2357
JournalJournal of Applied Physics
Volume74
Issue number3
Publication statusPublished - 1994

Cite this

@article{5c6cca456890432dab17afc17abfa8c8,
title = "Annealing Behaviour of Deep-Level Defects in 1MeV Electron Irradiated GaAs",
author = "S.T. Lai and Brett Nener",
year = "1994",
language = "English",
volume = "74",
pages = "2354--2357",
journal = "J. Applied Physics",
issn = "0021-8979",
publisher = "ACOUSTICAL SOC AMER AMER INST PHYSICS",
number = "3",

}

Annealing Behaviour of Deep-Level Defects in 1MeV Electron Irradiated GaAs. / Lai, S.T.; Nener, Brett.

In: Journal of Applied Physics, Vol. 74, No. 3, 1994, p. 2354-2357.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Annealing Behaviour of Deep-Level Defects in 1MeV Electron Irradiated GaAs

AU - Lai, S.T.

AU - Nener, Brett

PY - 1994

Y1 - 1994

M3 - Article

VL - 74

SP - 2354

EP - 2357

JO - J. Applied Physics

JF - J. Applied Physics

SN - 0021-8979

IS - 3

ER -