Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN

Gilberto A. Umana-Membreno; S.M.R. Spaargaren; John Dell; Brett Nener; Lorenzo Faraone; Giacinta Parish; U.K. Mishra

Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN

Gilberto A. Umana-Membreno, S.M.R. Spaargaren, John Dell, Brett Nener, Lorenzo Faraone, Giacinta Parish, U.K. Mishra

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI)
Editors	Jagadish, C. Welham, N.J.
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	23-26
Volume	1
Edition	Canberra, ACT, Australia
ISBN (Print)	0780358147
Publication status	Published - 2000
Event	2000 International Semiconducting and Insulating Materials Conference - Canberra, Australia Duration: 3 Jul 2000 → 7 Jul 2000 https://ieeexplore.ieee.org/document/939185

Conference

Conference	2000 International Semiconducting and Insulating Materials Conference
Abbreviated title	SIMC-XI
Country/Territory	Australia
City	Canberra
Period	3/07/00 → 7/07/00
Internet address	https://ieeexplore.ieee.org/document/939185

Cite this

Umana-Membreno, G. A., Spaargaren, S. M. R., Dell, J., Nener, B., Faraone, L., Parish, G., & Mishra, U. K. (2000). Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN. In Jagadish, C. Welham, & N.J. (Eds.), Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI) (Canberra, ACT, Australia ed., Vol. 1, pp. 23-26). IEEE, Institute of Electrical and Electronics Engineers.

Umana-Membreno, Gilberto A. ; Spaargaren, S.M.R. ; Dell, John et al. / Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN. Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI). editor / Jagadish ; C. Welham ; N.J. Vol. 1 Canberra, ACT, Australia. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2000. pp. 23-26

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title = "Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN",

author = "Umana-Membreno, {Gilberto A.} and S.M.R. Spaargaren and John Dell and Brett Nener and Lorenzo Faraone and Giacinta Parish and U.K. Mishra",

year = "2000",

language = "English",

isbn = "0780358147",

volume = "1",

pages = "23--26",

editor = "Jagadish and C. Welham and N.J.",

booktitle = "Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "Canberra, ACT, Australia",

note = "2000 International Semiconducting and Insulating Materials Conference, SIMC-XI ; Conference date: 03-07-2000 Through 07-07-2000",

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Umana-Membreno, GA, Spaargaren, SMR, Dell, J , Nener, B , Faraone, L , Parish, G & Mishra, UK 2000, Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN. in Jagadish, C Welham & N.J. (eds), Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI). Canberra, ACT, Australia edn, vol. 1, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 23-26, 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3/07/00.

Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN. / Umana-Membreno, Gilberto A.; Spaargaren, S.M.R.; Dell, John et al.
Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI). ed. / Jagadish; C. Welham; N.J. Vol. 1 Canberra, ACT, Australia. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2000. p. 23-26.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN

AU - Umana-Membreno, Gilberto A.

AU - Spaargaren, S.M.R.

AU - Dell, John

AU - Nener, Brett

AU - Faraone, Lorenzo

AU - Parish, Giacinta

AU - Mishra, U.K.

PY - 2000

Y1 - 2000

M3 - Conference paper

SN - 0780358147

VL - 1

SP - 23

EP - 26

BT - Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI)

A2 - Jagadish, null

A2 - Welham, C.

A2 - N.J., null

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - 2000 International Semiconducting and Insulating Materials Conference

Y2 - 3 July 2000 through 7 July 2000

ER -

Umana-Membreno GA, Spaargaren SMR, Dell J , Nener B , Faraone L , Parish G et al. Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN. In Jagadish, Welham C, N.J., editors, Proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI). Canberra, ACT, Australia ed. Vol. 1. USA: IEEE, Institute of Electrical and Electronics Engineers. 2000. p. 23-26