Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs

John Dell; Giacinta Parish; Lorenzo Faraone; Gilberto A. Umana-Membreno

doi:10.1109/COMMAD.2002.1237273

Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs

John Dell, Giacinta Parish, Lorenzo Faraone, Gilberto A. Umana-Membreno

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

5 Citations (Scopus)

Abstract

Geometrical magnetoresistancc measurements can be used to obtain mobility and carrier concentration ill field effect transistor structures. While easily implemented, the accuracy of extracted parameters can be adversely affected by high parasitic resistances arising from ohmic contacts and/or ungated channel access regions. We present here a parameter extraction method for MODFET structures that accounts for parasitic elements, allowing accurate extraction of mobility-concentration profiles. To demonstrate the applicability of the method, and the deleterious effect of scries resistance. we apply the method to an Al_0.35Ga_0.65N/GaN MODFET and compare the results obtained to those obtained by neglecting the effect of parasitic contact resistance.

Original language	English
Title of host publication	COMMAD 2002 PROCEEDINGS (02EX 601)
Editors	Michael Gal
Place of Publication	Piscataway, New Jersey, USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	393-396
Number of pages	4
Volume	2002-January
ISBN (Print)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237273
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

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10.1109/COMMAD.2002.1237273

Cite this

@inproceedings{dc120d68c8d94b1eafda95f43e069413,

title = "Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs",

abstract = "Geometrical magnetoresistancc measurements can be used to obtain mobility and carrier concentration ill field effect transistor structures. While easily implemented, the accuracy of extracted parameters can be adversely affected by high parasitic resistances arising from ohmic contacts and/or ungated channel access regions. We present here a parameter extraction method for MODFET structures that accounts for parasitic elements, allowing accurate extraction of mobility-concentration profiles. To demonstrate the applicability of the method, and the deleterious effect of scries resistance. we apply the method to an Al0.35Ga0.65N/GaN MODFET and compare the results obtained to those obtained by neglecting the effect of parasitic contact resistance.",

author = "John Dell and Giacinta Parish and Lorenzo Faraone and Umana-Membreno, {Gilberto A.}",

year = "2002",

doi = "10.1109/COMMAD.2002.1237273",

language = "English",

isbn = "0780375718",

volume = "2002-January",

pages = "393--396",

editor = "Michael Gal",

booktitle = "COMMAD 2002 PROCEEDINGS (02EX 601)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",

}

Dell, J , Parish, G , Faraone, L & Umana-Membreno, GA 2002, Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs. in M Gal (ed.), COMMAD 2002 PROCEEDINGS (02EX 601). vol. 2002-January, 1237273, IEEE, Institute of Electrical and Electronics Engineers, Piscataway, New Jersey, USA, pp. 393-396, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237273

Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs. / Dell, John ; Parish, Giacinta ; Faraone, Lorenzo et al.
COMMAD 2002 PROCEEDINGS (02EX 601). ed. / Michael Gal. Vol. 2002-January Piscataway, New Jersey, USA: IEEE, Institute of Electrical and Electronics Engineers, 2002. p. 393-396 1237273.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs

AU - Dell, John

AU - Parish, Giacinta

AU - Faraone, Lorenzo

AU - Umana-Membreno, Gilberto A.

PY - 2002

Y1 - 2002

N2 - Geometrical magnetoresistancc measurements can be used to obtain mobility and carrier concentration ill field effect transistor structures. While easily implemented, the accuracy of extracted parameters can be adversely affected by high parasitic resistances arising from ohmic contacts and/or ungated channel access regions. We present here a parameter extraction method for MODFET structures that accounts for parasitic elements, allowing accurate extraction of mobility-concentration profiles. To demonstrate the applicability of the method, and the deleterious effect of scries resistance. we apply the method to an Al0.35Ga0.65N/GaN MODFET and compare the results obtained to those obtained by neglecting the effect of parasitic contact resistance.

AB - Geometrical magnetoresistancc measurements can be used to obtain mobility and carrier concentration ill field effect transistor structures. While easily implemented, the accuracy of extracted parameters can be adversely affected by high parasitic resistances arising from ohmic contacts and/or ungated channel access regions. We present here a parameter extraction method for MODFET structures that accounts for parasitic elements, allowing accurate extraction of mobility-concentration profiles. To demonstrate the applicability of the method, and the deleterious effect of scries resistance. we apply the method to an Al0.35Ga0.65N/GaN MODFET and compare the results obtained to those obtained by neglecting the effect of parasitic contact resistance.

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U2 - 10.1109/COMMAD.2002.1237273

DO - 10.1109/COMMAD.2002.1237273

M3 - Conference paper

SN - 0780375718

VL - 2002-January

SP - 393

EP - 396

BT - COMMAD 2002 PROCEEDINGS (02EX 601)

A2 - Gal, Michael

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway, New Jersey, USA

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002

Y2 - 11 December 2002 through 13 December 2002

ER -

Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs

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