In this work, we investigated the growth of bulk AlGaN layers on n-type 6H-SiC by metalorganic chemical vapor deposition, and use of this material in solar-blind ultraviolet photodiodes. Direct nucleation of the AlGaN on the SiC was used to enable a conducting buffer, rather than use of an AlN nucleation layer. Diodes with backside contacts were fabricated on UV photodetector structures of p-GaN/i-AlGaN/n-GaN. Leakage currents were measured to be as low as 10nA/cm2. Responsivity measurements revealed undesirable photocurrent contribution from the underlying SiC.
|Number of pages||10|
|Publication status||Published - 1 Dec 2000|
|Event||Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices - Ithaca, NY, United States|
Duration: 7 Aug 2000 → 9 Aug 2000
|Conference||Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices|
|Period||7/08/00 → 9/08/00|