AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate

G. Parish; M. Hansen; B. Moran; S. Keller; S. P. DenBaars; U. K. Mishra

AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate

G. Parish, M. Hansen, B. Moran, S. Keller, S. P. DenBaars, U. K. Mishra

Research output: Contribution to conference › Conference presentation/ephemera › peer-review

Abstract

In this work, we investigated the growth of bulk AlGaN layers on n-type 6H-SiC by metalorganic chemical vapor deposition, and use of this material in solar-blind ultraviolet photodiodes. Direct nucleation of the AlGaN on the SiC was used to enable a conducting buffer, rather than use of an AlN nucleation layer. Diodes with backside contacts were fabricated on UV photodetector structures of p-GaN/i-AlGaN/n-GaN. Leakage currents were measured to be as low as 10nA/cm². Responsivity measurements revealed undesirable photocurrent contribution from the underlying SiC.

Original language	English
Pages	215-224
Number of pages	10
Publication status	Published - 1 Dec 2000
Externally published	Yes
Event	Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices - Ithaca, NY, United States Duration: 7 Aug 2000 → 9 Aug 2000

Conference

Conference	Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices
Country/Territory	United States
City	Ithaca, NY
Period	7/08/00 → 9/08/00

Cite this

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title = "AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate",

abstract = "In this work, we investigated the growth of bulk AlGaN layers on n-type 6H-SiC by metalorganic chemical vapor deposition, and use of this material in solar-blind ultraviolet photodiodes. Direct nucleation of the AlGaN on the SiC was used to enable a conducting buffer, rather than use of an AlN nucleation layer. Diodes with backside contacts were fabricated on UV photodetector structures of p-GaN/i-AlGaN/n-GaN. Leakage currents were measured to be as low as 10nA/cm2. Responsivity measurements revealed undesirable photocurrent contribution from the underlying SiC.",

author = "G. Parish and M. Hansen and B. Moran and S. Keller and DenBaars, {S. P.} and Mishra, {U. K.}",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "215--224",

note = "Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices ; Conference date: 07-08-2000 Through 09-08-2000",

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TY - CONF

T1 - AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate

AU - Parish, G.

AU - Hansen, M.

AU - Moran, B.

AU - Keller, S.

AU - DenBaars, S. P.

AU - Mishra, U. K.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - In this work, we investigated the growth of bulk AlGaN layers on n-type 6H-SiC by metalorganic chemical vapor deposition, and use of this material in solar-blind ultraviolet photodiodes. Direct nucleation of the AlGaN on the SiC was used to enable a conducting buffer, rather than use of an AlN nucleation layer. Diodes with backside contacts were fabricated on UV photodetector structures of p-GaN/i-AlGaN/n-GaN. Leakage currents were measured to be as low as 10nA/cm2. Responsivity measurements revealed undesirable photocurrent contribution from the underlying SiC.

AB - In this work, we investigated the growth of bulk AlGaN layers on n-type 6H-SiC by metalorganic chemical vapor deposition, and use of this material in solar-blind ultraviolet photodiodes. Direct nucleation of the AlGaN on the SiC was used to enable a conducting buffer, rather than use of an AlN nucleation layer. Diodes with backside contacts were fabricated on UV photodetector structures of p-GaN/i-AlGaN/n-GaN. Leakage currents were measured to be as low as 10nA/cm2. Responsivity measurements revealed undesirable photocurrent contribution from the underlying SiC.

UR - http://www.scopus.com/inward/record.url?scp=0034593650&partnerID=8YFLogxK

M3 - Conference presentation/ephemera

AN - SCOPUS:0034593650

SP - 215

EP - 224

T2 - Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices

Y2 - 7 August 2000 through 9 August 2000

ER -

AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate

Abstract

Conference

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