AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate

G. Parish, M. Hansen, B. Moran, S. Keller, S. P. DenBaars, U. K. Mishra

Research output: Contribution to conferenceConference presentation/ephemera

2 Citations (Scopus)

Abstract

In this work, we investigated the growth of bulk AlGaN layers on n-type 6H-SiC by metalorganic chemical vapor deposition, and use of this material in solar-blind ultraviolet photodiodes. Direct nucleation of the AlGaN on the SiC was used to enable a conducting buffer, rather than use of an AlN nucleation layer. Diodes with backside contacts were fabricated on UV photodetector structures of p-GaN/i-AlGaN/n-GaN. Leakage currents were measured to be as low as 10nA/cm2. Responsivity measurements revealed undesirable photocurrent contribution from the underlying SiC.

Original languageEnglish
Pages215-224
Number of pages10
Publication statusPublished - 1 Dec 2000
Externally publishedYes
EventProceedings of 2000 IEEE/Cornell Conference on High Performance Devices - Ithaca, NY, United States
Duration: 7 Aug 20009 Aug 2000

Conference

ConferenceProceedings of 2000 IEEE/Cornell Conference on High Performance Devices
CountryUnited States
CityIthaca, NY
Period7/08/009/08/00

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