AlGaN/GaN dual-gate modulation-doped field-effect transistors

C. H. Chen; K. Krishnamurthy; S. Keller; G. Parish; M. Rodwell; U. K. Mishra; Y. F. Wu

doi:10.1049/el:19990627

AlGaN/GaN dual-gate modulation-doped field-effect transistors

C. H. Chen, K. Krishnamurthy, S. Keller, G. Parish, M. Rodwell, U. K. Mishra, Y. F. Wu

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 μm gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5 W/mm at 4 GHz. The corresponding large-signal gain is 11.5 dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.

Original language	English
Pages (from-to)	933-935
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1049/el:19990627
Publication status	Published - 27 May 1999
Externally published	Yes

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abstract = "The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 μm gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5 W/mm at 4 GHz. The corresponding large-signal gain is 11.5 dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.",

author = "Chen, {C. H.} and K. Krishnamurthy and S. Keller and G. Parish and M. Rodwell and Mishra, {U. K.} and Wu, {Y. F.}",

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T1 - AlGaN/GaN dual-gate modulation-doped field-effect transistors

AU - Chen, C. H.

AU - Krishnamurthy, K.

AU - Keller, S.

AU - Parish, G.

AU - Rodwell, M.

AU - Mishra, U. K.

AU - Wu, Y. F.

PY - 1999/5/27

Y1 - 1999/5/27

N2 - The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 μm gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5 W/mm at 4 GHz. The corresponding large-signal gain is 11.5 dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.

AB - The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 μm gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5 W/mm at 4 GHz. The corresponding large-signal gain is 11.5 dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.

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U2 - 10.1049/el:19990627

DO - 10.1049/el:19990627

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VL - 35

SP - 933

EP - 935

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

AlGaN/GaN dual-gate modulation-doped field-effect transistors

Abstract

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