AlGaN/GaN dual-gate modulation-doped field-effect transistors

C. H. Chen, K. Krishnamurthy, S. Keller, G. Parish, M. Rodwell, U. K. Mishra, Y. F. Wu

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 μm gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5 W/mm at 4 GHz. The corresponding large-signal gain is 11.5 dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.

Original languageEnglish
Pages (from-to)933-935
Number of pages3
JournalElectronics Letters
Volume35
Issue number11
DOIs
Publication statusPublished - 27 May 1999
Externally publishedYes

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