Abstract
Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonly exhibited by AlGaN/GaN HEMTs, is dramatically reduced by introduction of the interlayer. These results provide insight into the role of alloy and interface roughness scattering on 2DEG properties.
Original language | English |
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Title of host publication | COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings |
Pages | 29-32 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Dec 2005 |
Event | COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004 |
Conference
Conference | COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices |
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Country/Territory | Australia |
City | Bribane, QLD |
Period | 8/12/04 → 10/12/04 |