AlGaN/AlN/GaN high electron mobility transistors with improved carrier transport

Gia Parish, Gilberto A. Umana-Membreno, Stephen M. Jolley, Dario Buttari, Stacia Keller, Brett D. Nener, Umesh K. Mishra

    Research output: Chapter in Book/Conference paperConference paper

    5 Citations (Scopus)

    Abstract

    Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonly exhibited by AlGaN/GaN HEMTs, is dramatically reduced by introduction of the interlayer. These results provide insight into the role of alloy and interface roughness scattering on 2DEG properties.

    Original languageEnglish
    Title of host publicationCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
    Pages29-32
    Number of pages4
    DOIs
    Publication statusPublished - 1 Dec 2005
    EventCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia
    Duration: 8 Dec 200410 Dec 2004

    Conference

    ConferenceCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
    CountryAustralia
    CityBribane, QLD
    Period8/12/0410/12/04

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