Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters

P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskiǐ, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskiǐ, M. A. Putyato, B. R. Semyagin

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The accumulation of electrons and holes in GaAs layers that contained As clusters and were sandwiched between n- and p-type buffer GaAs layers was revealed by capacitance-voltage measurements. As a result of majority-carrier accumulation, expansive depletion regions are formed in the adjoining buffer layers. Simulation of the capacitance-voltage characteristics, based on a numerical solution of the Poisson equation, shows that the accumulated charge density is ∼1 x 1012 cm-2, which is comparable with the concentration of As nanoclusters determined by transmission electron microscopy.

Original languageEnglish
Pages (from-to)1068-1072
Number of pages5
JournalSemiconductors
Volume34
Issue number9
DOIs
Publication statusPublished - Sep 2000
Externally publishedYes

Fingerprint

Dive into the research topics of 'Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters'. Together they form a unique fingerprint.

Cite this