Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters

P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskiǐ, V. V. Preobrazhenskiǐ, M. A. Putyato, B. R. Semyagin

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7 Citations (Scopus)

Abstract

Capacitance spectroscopy was used to investigate the properties of Au/GaAs Schottky barriers in structures in which a thin layer of gallium arsenide grown at low temperature (LT-GaAs) and containing As clusters was sandwiched between two uniformly copper-doped layers of n-GaAs grown at standard temperatures. We detected electron accumulation in the LT-GaAs layer surrounded by two depletion regions in the adjacent n-GaAs layers. Emission of electrons from the LT-GaAs layer at 300 K results in an extended plateau in the capacitance-voltage characteristic. It is found that the presence of the O.I μm thick LT-GaAs layer sandwiched between the two much thicker n-GaAs layers results in an increase in the breakdown electric field to values as high as 230 kV/cm, which is much higher than typical values for standard Au/n-GaAs structures.

Original languageEnglish
Pages (from-to)1044-1047
Number of pages4
JournalSemiconductors
Volume32
Issue number10
DOIs
Publication statusPublished - Oct 1998
Externally publishedYes

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