ACCUMULATION-MODE AND INVERSION-MODE TRIPLE-GATE MOSFETS

R. Yan, A. Afkalian, C. -W. Lee, N. Dehdashti Akhavan, W. Xiong, J. -P. Colinge

Research output: Chapter in Book/Conference paperConference paperpeer-review

2 Citations (Scopus)

Abstract

This work analyzes the performance of very narrow triple-gate SOI MOSFETs on the basis of experimental and 3D simulation data. Short channel effects (SCEs) are quite reduced in those devices due to the good electrostatic control by the Surrounding gate and the high L-g/W-fin ratio. The experimental data indicate that SCEs of accumulation-mode (AM) triple gate devices are comparable to those observed in inversion-mode (IM) devices down to a gate length of 50 nm. This makes AM triple gate (or more generally, multi-gate) MOSFETs interesting devices for digital applications.

Original languageEnglish
Title of host publicationCIICT 2008: PROCEEDINGS OF CHINA-IRELAND INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATIONS TECHNOLOGIES 2008
EditorsFC Yang
PublisherInstitution of Engineering and Technology (IET)
Pages627-+
Number of pages2
ISBN (Print)978-0-86341-921-8
DOIs
Publication statusPublished - 2008
Event3rd China-Ireland International Conference on Information and Communications Technologies - Beijing
Duration: 26 Sep 200828 Sep 2008

Conference

Conference3rd China-Ireland International Conference on Information and Communications Technologies
CityBeijing
Period26/09/0828/09/08

Fingerprint

Dive into the research topics of 'ACCUMULATION-MODE AND INVERSION-MODE TRIPLE-GATE MOSFETS'. Together they form a unique fingerprint.

Cite this