A Theoretical Study of Electron Mobility Distribution in FDSOI MOSFET

In this work, we present results of a theoretical study of the electron mobility distribution in long-channel planar fully-depleted silicon-on-insulator (FD-SOI) transistors employing quantum mechanical modelling. The simulation results indicate that, in transistors with 10 nm thick Si channel layer and lengths varying from 50 nm to 200 nm, electronic transport is clearly due to two distinct and well-defined electron populations. These two calculated electron mobility distributions arise from sub-band modulated transport in 10-nm thick Si planar FD-SOI MOSFETs. Self-consistent NEGF-Poisson numerical calculations indicate significant localization of the total electron population near the front interfaces. These finding can be used to better interpret experimental results obtained by magnetic-field dependent geometrical magnetoresistance measurements and mobility spectrum analysis.