A Theoretical Study of Electron Mobility Distribution in FDSOI MOSFET

N. D. Akhavan, G. A. Umana-Membreno, R. Gu, J. Antoszewski, L. Faraone, S. Cristoloveanu

Research output: Chapter in Book/Conference paperConference paperpeer-review

Abstract

In this work, we present results of a theoretical study of the electron mobility distribution in long-channel planar fully-depleted silicon-on-insulator (FD-SOI) transistors employing quantum mechanical modelling. The simulation results indicate that, in transistors with 10 nm thick Si channel layer and lengths varying from 50 nm to 200 nm, electronic transport is clearly due to two distinct and well-defined electron populations. These two calculated electron mobility distributions arise from sub-band modulated transport in 10-nm thick Si planar FD-SOI MOSFETs. Self-consistent NEGF-Poisson numerical calculations indicate significant localization of the total electron population near the front interfaces. These finding can be used to better interpret experimental results obtained by magnetic-field dependent geometrical magnetoresistance measurements and mobility spectrum analysis.

Original languageEnglish
Title of host publication2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
PublisherIEEE, Institute of Electrical and Electronics Engineers
ISBN (Electronic)9781665437455
DOIs
Publication statusPublished - 1 Sep 2021
Event2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021 - Caen, France
Duration: 1 Sep 20213 Sep 2021

Publication series

Name2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021

Conference

Conference2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
Country/TerritoryFrance
CityCaen
Period1/09/213/09/21

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