A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

S Safa; Asghar Asgari Tokaldani; Lorenzo Faraone

doi:10.1063/1.4817088

A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

S Safa, Asghar Asgari Tokaldani, Lorenzo Faraone

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	053712-1 - 053712-6
Journal	Journal of Applied Physics
Volume	114
DOIs	https://doi.org/10.1063/1.4817088
Publication status	Published - 2013

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10.1063/1.4817088

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title = "A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices",

author = "S Safa and {Asgari Tokaldani}, Asghar and Lorenzo Faraone",

year = "2013",

doi = "10.1063/1.4817088",

language = "English",

volume = "114",

pages = "053712--1 -- 053712--6",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

AU - Safa, S

AU - Asgari Tokaldani, Asghar

AU - Faraone, Lorenzo

PY - 2013

Y1 - 2013

U2 - 10.1063/1.4817088

DO - 10.1063/1.4817088

M3 - Article

SN - 0021-8979

VL - 114

SP - 053712-1 - 053712-6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -