A Simulation Comparison between Junctionless and Inversion-Mode MuGFETs

J. P. Colinge, A. Kranti, R. Yan, I. Ferain, N. Dehdashti Akhavan, P. Razavi, C. W. Lee, R. Yu, C. A. Colinge

Research output: Chapter in Book/Conference paperConference paperpeer-review

28 Citations (Scopus)

Abstract

A new type of multigate MOSFET, called the junctionless nanowire transistor (JNT), has recently been proposed. It avoids junction formation problem and can be used to make very short-channel devices. Here, we compare the properties and performances of junctionless nanowire transistors with those of with Pi-gate inversion-mode (IM) devices. The performances of silicon JNTs and IM transistors are evaluated in terms of short-channel effects, current drive, and gate capacitance. Junctionless devices are shown to have smaller short-channel effects than inversion-mode transistors with junctions. Comparison of carrier transport in the channel is made between junctionless nanowires and inversion-mode multigate field-effect transistors, and the benefits/drawbacks of bulk transport vs. surface transport are addressed.

Original languageEnglish
Title of host publicationADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15
EditorsY Omura, H Ishii, BY Nguyen, S Selberherr, F Gamiz, JA Martino, JP Raskin
PublisherElectrochemical Society, Inc.
Pages63-72
Number of pages10
DOIs
Publication statusPublished - 2011
Event15th International Symposium on Advanced Semiconductor-On-Insulator Technology and Related Physics/219th Meeting of the Electrochemical-Society/Symposium on Electrodeposition for Energy Applications 2 - Montreal, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
PublisherELECTROCHEMICAL SOCIETY INC
Volume35
ISSN (Print)1938-5862

Conference

Conference15th International Symposium on Advanced Semiconductor-On-Insulator Technology and Related Physics/219th Meeting of the Electrochemical-Society/Symposium on Electrodeposition for Energy Applications 2
Country/TerritoryCanada
CityMontreal
Period1/05/116/05/11

Fingerprint

Dive into the research topics of 'A Simulation Comparison between Junctionless and Inversion-Mode MuGFETs'. Together they form a unique fingerprint.

Cite this