Original language | English |
---|---|
Pages (from-to) | 229-234 |
Journal | Microelectronics Reliability |
Volume | 51 |
DOIs | |
Publication status | Published - 2011 |
A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion
D. Mari, M. Bernardoni, G. Sozzi, R. Menozzi, Gilberto A. Umana Membreno, Brett Nener
Research output: Contribution to journal › Article › peer-review
12
Citations
(Scopus)