@inproceedings{76bafee5a69d4fd29b92610b4f5af2ac,

title = "A new F(ast)-CMS Algorithm for Efficient Three-Dimensional NEGF Simulations of Arbitrarily Shaped Silicon Nanowire MUGFETs",

abstract = "We present here 3D quantum simulations based on Non-Equilibrium Green's Function (NEGF) formalism using the Comsol Multiphysics(TM) software and on the implementation of a new Fast Coupled Mode-Space (FCMS) approach. The FCMS algorithm allows one to simulate transport in nanostructures presenting discontinuities, as the normal Coupled Mode-Space (CMS) algorithm does, but with the speed of a Fast Uncoupled-Mode Space (FUMS) algorithm (a faster algorithm that cannot handle discontinuities). Using our simulator, we also show that energy barriers resulting from cross-section variations at the gate edge of a nanowire can be optimized to improve the on/off current ratio. A subthreshold slope steeper than the kT/q.log(10) limit of classical transistors together with symmetrical source-drain operation is demonstrated for the first time using this new Variable barrier tunnel transistor (VBT) concept.",

keywords = "Silicon on insulator technology, MOS devices, Quantum effect semiconductor devices, Quantum Wires, Semiconductor device modeling, Tunnel FET, steep subthreshold slope, TRANSISTORS, DEVICE",

author = "A. Afzalian and Lee, {C. -W.} and Akhavan, {N. Dehdashti} and R. Yan and I. Ferain and P. Razavi and Colinge, {J. -P.}",

year = "2009",

language = "English",

isbn = "978-1-4244-3948-5",

series = "International Conference on Simulation of Semiconductor Processes and Devices",

publisher = "Wiley-IEEE Press",

pages = "237--240",

booktitle = "2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES",

note = "International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 09-09-2009 Through 11-09-2009",

}