A new F(ast)-CMS Algorithm for Efficient Three-Dimensional NEGF Simulations of Arbitrarily Shaped Silicon Nanowire MUGFETs

A. Afzalian, C. -W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, J. -P. Colinge

Research output: Chapter in Book/Conference paperConference paper

1 Citation (Scopus)

Abstract

We present here 3D quantum simulations based on Non-Equilibrium Green's Function (NEGF) formalism using the Comsol Multiphysics(TM) software and on the implementation of a new Fast Coupled Mode-Space (FCMS) approach. The FCMS algorithm allows one to simulate transport in nanostructures presenting discontinuities, as the normal Coupled Mode-Space (CMS) algorithm does, but with the speed of a Fast Uncoupled-Mode Space (FUMS) algorithm (a faster algorithm that cannot handle discontinuities). Using our simulator, we also show that energy barriers resulting from cross-section variations at the gate edge of a nanowire can be optimized to improve the on/off current ratio. A subthreshold slope steeper than the kT/q.log(10) limit of classical transistors together with symmetrical source-drain operation is demonstrated for the first time using this new Variable barrier tunnel transistor (VBT) concept.

Original languageEnglish
Title of host publication2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES
PublisherWiley-IEEE Press
Pages237-240
Number of pages4
ISBN (Print)978-1-4244-3948-5
Publication statusPublished - 2009
EventInternational Conference on Simulation of Semiconductor Processes and Devices - San Diego, Canada
Duration: 9 Sep 200911 Sep 2009

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices
PublisherIEEE
ISSN (Print)1946-1569

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
CountryCanada
CitySan Diego
Period9/09/0911/09/09

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