A Monolithic Dual-Band HgCdTe Infrared Detector Structure

Giacinta Parish; Charles Musca; J.F. Siliquini; Jarek Antoszewski; John Dell; Brett Nener; Lorenzo Faraone; G.J. Gouws

doi:10.1109/55.596934

A Monolithic Dual-Band HgCdTe Infrared Detector Structure

Giacinta Parish, Charles Musca, J.F. Siliquini, Jarek Antoszewski, John Dell, Brett Nener, Lorenzo Faraone, G.J. Gouws

Graduate Research School

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m.

Original language	English
Pages (from-to)	352-354
Journal	IEEE Electron Device Letters
Volume	18
DOIs	https://doi.org/10.1109/55.596934
Publication status	Published - 1997

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10.1109/55.596934

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title = "A Monolithic Dual-Band HgCdTe Infrared Detector Structure",

abstract = "A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m.",

author = "Giacinta Parish and Charles Musca and J.F. Siliquini and Jarek Antoszewski and John Dell and Brett Nener and Lorenzo Faraone and G.J. Gouws",

year = "1997",

doi = "10.1109/55.596934",

language = "English",

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pages = "352--354",

journal = "IEEE Electron Device Letters",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - A Monolithic Dual-Band HgCdTe Infrared Detector Structure

AU - Parish, Giacinta

AU - Musca, Charles

AU - Siliquini, J.F.

AU - Antoszewski, Jarek

AU - Dell, John

AU - Nener, Brett

AU - Faraone, Lorenzo

AU - Gouws, G.J.

PY - 1997

Y1 - 1997

N2 - A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m.

AB - A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m.

U2 - 10.1109/55.596934

DO - 10.1109/55.596934

M3 - Article

VL - 18

SP - 352

EP - 354

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

A Monolithic Dual-Band HgCdTe Infrared Detector Structure

Abstract

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