TY - JOUR
T1 - A monolithic dual-band HgCdTe infrared detector
AU - Musca, Charles
AU - Siliquini, J.F.
AU - Parish, Giacinta
AU - Dell, John
AU - Faraone, Lorenzo
PY - 1998
Y1 - 1998
N2 - A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The structure is the first reported on-pixel registered monolithic dual-band HgCdTe photoconductor. The technology is demonstrated by fabricating HgCdTe photoconductive detectors and the fabricated detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.
AB - A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The structure is the first reported on-pixel registered monolithic dual-band HgCdTe photoconductor. The technology is demonstrated by fabricating HgCdTe photoconductive detectors and the fabricated detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.
U2 - 10.1016/S0022-0248(98)80266-2
DO - 10.1016/S0022-0248(98)80266-2
M3 - Article
VL - 184-185
SP - 1284
EP - 1287
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -