A monolithic dual-band HgCdTe infrared detector

Charles Musca, J.F. Siliquini, Giacinta Parish, John Dell, Lorenzo Faraone

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The structure is the first reported on-pixel registered monolithic dual-band HgCdTe photoconductor. The technology is demonstrated by fabricating HgCdTe photoconductive detectors and the fabricated detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1284-1287
JournalJournal of Crystal Growth
Publication statusPublished - 1998


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