A method of removing the valence band discontinuity in HgCdTe-based nBn detectors

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    Abstract

    © 2014 AIP Publishing LLC. A method is described where the valence band discontinuity in HgCdTe-based nBn detectors will be eliminated. The method relies on doping modulation technique, where grading the material composition and doping concentration of the barrier layer at the same time will lead to elimination of the valence band discontinuity in HgCdTe-based nBn detectors. The method is not limited to the nBn structure and can be applied to any barrier detector structure with xBx (with x-=-n, p) to eliminate the energy band discontinuity in the valence band or conduction band.
    Original languageEnglish
    Article number121110
    Number of pages4
    JournalApplied Physics Letters
    Volume105
    Issue number12
    DOIs
    Publication statusPublished - 24 Sep 2014

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