A memristor crossbar based on a novel ternary memristor model

Xiaoyuan Wang, Jiawei Zhou, Chuantao Dong, Chenxi Jin, Jason K. Eshraghian, Herbert Ho Ching Iu, Sung Mo Kang

Research output: Contribution to journalArticlepeer-review


In this paper, a high-density programmable logic array based on a ternary memristor crossbar array is designed. Based on the three-valued state characteristics of the ternary memristor, we implement the ternary OR logic gate and a standard ternary inverter to demonstrate the application of this proposed crossbar by using reconfigurable and programmable connections of the memristor cells in the array. Subsequently, on the basis of these logic gates, ternary NAND gates, NOR gates, XOR gates and XNOR gates are further realized. The above-mentioned logic gates all use memristance as the logic state variable. Finally, we verified the functionality of the programmable gate array based on the proposed ternary memristor crossbar through SPICE simulation and gave the power consumption of each circuit under different input conditions. Compared with existing ternary memristor cross array circuits, our circuit has the advantages of low power consumption and high integration.

Original languageEnglish
Pages (from-to)7583-7596
Number of pages14
JournalNonlinear Dynamics
Issue number9
Early online date20 Mar 2024
Publication statusPublished - May 2024


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