A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

JJ Xu; S Keller; Giacinta Parish; S Heikman; UK Mishra; RA York

doi:10.1109/22.899015

A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

JJ Xu, S Keller, Giacinta Parish, S Heikman, UK Mishra, RA York

Research output: Contribution to journal › Article

42 Citations (Scopus)

Abstract

In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel LCR-matching networks in a four-way binary-Wilkinson combiner structure. Using devices with 0.7-mum gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10-GHz bandwidth. Output power of 8 W (continuous wave) at 9.5 GHz with about 20% power-added efficiency was achieved when biased at 24 V,which is the highest output power for a power amplifier using GaN-HEMTs-on-sapphire.

Original language	English
Pages (from-to)	2573-2578
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	48
DOIs	https://doi.org/10.1109/22.899015
Publication status	Published - 2000

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Xu, JJ., Keller, S., Parish, G., Heikman, S., Mishra, UK., & York, RA. (2000). A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier. IEEE Transactions on Microwave Theory and Techniques, 48, 2573-2578. https://doi.org/10.1109/22.899015

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abstract = "In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel LCR-matching networks in a four-way binary-Wilkinson combiner structure. Using devices with 0.7-mum gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10-GHz bandwidth. Output power of 8 W (continuous wave) at 9.5 GHz with about 20% power-added efficiency was achieved when biased at 24 V,which is the highest output power for a power amplifier using GaN-HEMTs-on-sapphire.",

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AU - Parish, Giacinta

AU - Heikman, S

AU - Mishra, UK

AU - York, RA

PY - 2000

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