A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

JJ Xu, S Keller, Giacinta Parish, S Heikman, UK Mishra, RA York

    Research output: Contribution to journalArticlepeer-review

    43 Citations (Scopus)


    In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel LCR-matching networks in a four-way binary-Wilkinson combiner structure. Using devices with 0.7-mum gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10-GHz bandwidth. Output power of 8 W (continuous wave) at 9.5 GHz with about 20% power-added efficiency was achieved when biased at 24 V,which is the highest output power for a power amplifier using GaN-HEMTs-on-sapphire.
    Original languageEnglish
    Pages (from-to)2573-2578
    JournalIEEE Transactions on Microwave Theory and Techniques
    Publication statusPublished - 2000


    Dive into the research topics of 'A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier'. Together they form a unique fingerprint.

    Cite this