50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

Dirk Lorenser; D.J.H.C. Maas; H.J. Unold; A.R. Bellancourt; B. Rudin; E. Gini; D. Ebling; U. Keller

doi:10.1109/JQE.2006.878183

50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

Dirk Lorenser, D.J.H.C. Maas, H.J. Unold, A.R. Bellancourt, B. Rudin, E. Gini, D. Ebling, U. Keller

Research output: Contribution to journal › Article › peer-review

164 Citations (Scopus)

Abstract

We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail.

Original language	English
Pages (from-to)	838-847
Journal	IEEE Journal of Quantum Electronics
Volume	42
DOIs	https://doi.org/10.1109/JQE.2006.878183
Publication status	Published - 2006

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10.1109/JQE.2006.878183

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title = "50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power",

abstract = "We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail.",

author = "Dirk Lorenser and D.J.H.C. Maas and H.J. Unold and A.R. Bellancourt and B. Rudin and E. Gini and D. Ebling and U. Keller",

year = "2006",

doi = "10.1109/JQE.2006.878183",

language = "English",

volume = "42",

pages = "838--847",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - 50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

AU - Lorenser, Dirk

AU - Maas, D.J.H.C.

AU - Unold, H.J.

AU - Bellancourt, A.R.

AU - Rudin, B.

AU - Gini, E.

AU - Ebling, D.

AU - Keller, U.

PY - 2006

Y1 - 2006

N2 - We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail.

AB - We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail.

U2 - 10.1109/JQE.2006.878183

DO - 10.1109/JQE.2006.878183

M3 - Article

SN - 0018-9197

VL - 42

SP - 838

EP - 847

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

ER -

50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

Abstract

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