50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

Dirk Lorenser, D.J.H.C. Maas, H.J. Unold, A.R. Bellancourt, B. Rudin, E. Gini, D. Ebling, U. Keller

    Research output: Contribution to journalArticlepeer-review

    154 Citations (Scopus)

    Abstract

    We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail.
    Original languageEnglish
    Pages (from-to)838-847
    JournalIEEE Journal of Quantum Electronics
    Volume42
    DOIs
    Publication statusPublished - 2006

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