3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs

Jane J. Xu, Stacia Keller, Gia Parish, Sten Heikman, Umesh K. Mishra, Robert A. York

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


We report a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates, as the active devices. The circuit topology used novel LCR-matching networks in a 4-way binary-Wilkinson combiner structure. The devices were flip-chip bonded onto the AlN circuit for thermal management. Using devices with 0.7-μm gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10 GHz bandwidth. The saturation power level was 8.5 W at 8 GHz, which is the highest for a power amplifier using GaN-HEMTs-on-Sapphire.

Original languageEnglish
Pages (from-to)959-962
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 11 Dec 2000
Externally publishedYes
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boson, MA, USA
Duration: 11 Jun 200016 Jun 2000


Dive into the research topics of '3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs'. Together they form a unique fingerprint.

Cite this