3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs

Jane J. Xu; Stacia Keller; Gia Parish; Sten Heikman; Umesh K. Mishra; Robert A. York

3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs

Jane J. Xu, Stacia Keller, Gia Parish, Sten Heikman, Umesh K. Mishra, Robert A. York

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates, as the active devices. The circuit topology used novel LCR-matching networks in a 4-way binary-Wilkinson combiner structure. The devices were flip-chip bonded onto the AlN circuit for thermal management. Using devices with 0.7-μm gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10 GHz bandwidth. The saturation power level was 8.5 W at 8 GHz, which is the highest for a power amplifier using GaN-HEMTs-on-Sapphire.

Original language	English
Pages (from-to)	959-962
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 11 Dec 2000
Externally published	Yes
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boson, MA, USA Duration: 11 Jun 2000 → 16 Jun 2000

Cite this

@article{01759365e91644faa3cd1b19c4732150,

title = "3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs",

abstract = "We report a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates, as the active devices. The circuit topology used novel LCR-matching networks in a 4-way binary-Wilkinson combiner structure. The devices were flip-chip bonded onto the AlN circuit for thermal management. Using devices with 0.7-μm gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10 GHz bandwidth. The saturation power level was 8.5 W at 8 GHz, which is the highest for a power amplifier using GaN-HEMTs-on-Sapphire.",

author = "Xu, {Jane J.} and Stacia Keller and Gia Parish and Sten Heikman and Mishra, {Umesh K.} and York, {Robert A.}",

year = "2000",

month = dec,

day = "11",

language = "English",

volume = "2",

pages = "959--962",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

note = "Proceedings of the 1999 IEEE MTT-S International Microwave Symposium ; Conference date: 11-06-2000 Through 16-06-2000",

}

TY - JOUR

T1 - 3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs

AU - Xu, Jane J.

AU - Keller, Stacia

AU - Parish, Gia

AU - Heikman, Sten

AU - Mishra, Umesh K.

AU - York, Robert A.

PY - 2000/12/11

Y1 - 2000/12/11

N2 - We report a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates, as the active devices. The circuit topology used novel LCR-matching networks in a 4-way binary-Wilkinson combiner structure. The devices were flip-chip bonded onto the AlN circuit for thermal management. Using devices with 0.7-μm gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10 GHz bandwidth. The saturation power level was 8.5 W at 8 GHz, which is the highest for a power amplifier using GaN-HEMTs-on-Sapphire.

AB - We report a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates, as the active devices. The circuit topology used novel LCR-matching networks in a 4-way binary-Wilkinson combiner structure. The devices were flip-chip bonded onto the AlN circuit for thermal management. Using devices with 0.7-μm gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10 GHz bandwidth. The saturation power level was 8.5 W at 8 GHz, which is the highest for a power amplifier using GaN-HEMTs-on-Sapphire.

UR - http://www.scopus.com/inward/record.url?scp=0033710470&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033710470

SN - 0149-645X

VL - 2

SP - 959

EP - 962

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium

Y2 - 11 June 2000 through 16 June 2000

ER -

3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs

Abstract

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