1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

Xiaoyan Wu, Wenwu Pan, Zhenpu Zhang, Yaoyao Li, Chunfang Cao, Juanjuan Liu, Liyao Zhang, Yuxin Song, Haiyan Ou, Shumin Wang

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

Original languageEnglish
Pages (from-to)1322-1326
Number of pages5
JournalACS Photonics
Volume4
Issue number6
DOIs
Publication statusPublished - Jun 2017
Externally publishedYes

Cite this

Wu, Xiaoyan ; Pan, Wenwu ; Zhang, Zhenpu ; Li, Yaoyao ; Cao, Chunfang ; Liu, Juanjuan ; Zhang, Liyao ; Song, Yuxin ; Ou, Haiyan ; Wang, Shumin. / 1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy. In: ACS Photonics. 2017 ; Vol. 4, No. 6. pp. 1322-1326.
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title = "1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy",
abstract = "As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.",
keywords = "GaAsBi, molecular beam epitaxy, laser diodes, quantum well, uncooled laser, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR-LASERS, BAND-GAP, GAAS1-XBIX, RECOMBINATION, WAVELENGTH, GAINNAS, DIODES",
author = "Xiaoyan Wu and Wenwu Pan and Zhenpu Zhang and Yaoyao Li and Chunfang Cao and Juanjuan Liu and Liyao Zhang and Yuxin Song and Haiyan Ou and Shumin Wang",
year = "2017",
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Wu, X, Pan, W, Zhang, Z, Li, Y, Cao, C, Liu, J, Zhang, L, Song, Y, Ou, H & Wang, S 2017, '1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy' ACS Photonics, vol. 4, no. 6, pp. 1322-1326. https://doi.org/10.1021/acsphotonics.7b00240

1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy. / Wu, Xiaoyan; Pan, Wenwu; Zhang, Zhenpu; Li, Yaoyao; Cao, Chunfang; Liu, Juanjuan; Zhang, Liyao; Song, Yuxin; Ou, Haiyan; Wang, Shumin.

In: ACS Photonics, Vol. 4, No. 6, 06.2017, p. 1322-1326.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

AU - Wu, Xiaoyan

AU - Pan, Wenwu

AU - Zhang, Zhenpu

AU - Li, Yaoyao

AU - Cao, Chunfang

AU - Liu, Juanjuan

AU - Zhang, Liyao

AU - Song, Yuxin

AU - Ou, Haiyan

AU - Wang, Shumin

PY - 2017/6

Y1 - 2017/6

N2 - As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

AB - As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

KW - GaAsBi

KW - molecular beam epitaxy

KW - laser diodes

KW - quantum well

KW - uncooled laser

KW - TEMPERATURE-DEPENDENCE

KW - SEMICONDUCTOR-LASERS

KW - BAND-GAP

KW - GAAS1-XBIX

KW - RECOMBINATION

KW - WAVELENGTH

KW - GAINNAS

KW - DIODES

U2 - 10.1021/acsphotonics.7b00240

DO - 10.1021/acsphotonics.7b00240

M3 - Article

VL - 4

SP - 1322

EP - 1326

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 6

ER -