1-8-GHz GaN-Based Power Amplifier Using Flip-Chip Bonding

Jane J. Xu; Yi Feng Wu; Stacia Keller; Gia Parish; Sten Heikman; Brian J. Thibeault; Umesh K. Mishra; Robert A. York

doi:10.1109/75.774146

1-8-GHz GaN-Based Power Amplifier Using Flip-Chip Bonding

Jane J. Xu, Yi Feng Wu, Stacia Keller, Gia Parish, Sten Heikman, Brian J. Thibeault, Umesh K. Mishra, Robert A. York

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN/GaN power high-electron mobility transistors (HEMT's), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPA's. Using four HEMT's each with 0.75-µm gate length and 0.75-mm gate periphery, a small-signal gain of ~7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at V_ds= 18 V and 4.5 W when biased at V_ds= 22 V.

Original language	English
Pages (from-to)	277-279
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	9
Issue number	7
DOIs	https://doi.org/10.1109/75.774146
Publication status	Published - 1 Jan 1999
Externally published	Yes

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title = "1-8-GHz GaN-Based Power Amplifier Using Flip-Chip Bonding",

abstract = "We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN/GaN power high-electron mobility transistors (HEMT's), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPA's. Using four HEMT's each with 0.75-µm gate length and 0.75-mm gate periphery, a small-signal gain of ~7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at Vds= 18 V and 4.5 W when biased at Vds= 22 V.",

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T1 - 1-8-GHz GaN-Based Power Amplifier Using Flip-Chip Bonding

AU - Xu, Jane J.

AU - Wu, Yi Feng

AU - Keller, Stacia

AU - Parish, Gia

AU - Heikman, Sten

AU - Thibeault, Brian J.

AU - Mishra, Umesh K.

AU - York, Robert A.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN/GaN power high-electron mobility transistors (HEMT's), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPA's. Using four HEMT's each with 0.75-µm gate length and 0.75-mm gate periphery, a small-signal gain of ~7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at Vds= 18 V and 4.5 W when biased at Vds= 22 V.

AB - We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN/GaN power high-electron mobility transistors (HEMT's), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPA's. Using four HEMT's each with 0.75-µm gate length and 0.75-mm gate periphery, a small-signal gain of ~7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at Vds= 18 V and 4.5 W when biased at Vds= 22 V.

KW - Flip-chip

KW - GaN

KW - power amplifier

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EP - 279

JO - IEEE Microwave and Guided Wave Letters

JF - IEEE Microwave and Guided Wave Letters

IS - 7

ER -

1-8-GHz GaN-Based Power Amplifier Using Flip-Chip Bonding

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