1-8-GHz GaN-Based Power Amplifier Using Flip-Chip Bonding

Jane J. Xu, Yi Feng Wu, Stacia Keller, Gia Parish, Sten Heikman, Brian J. Thibeault, Umesh K. Mishra, Robert A. York

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN/GaN power high-electron mobility transistors (HEMT's), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPA's. Using four HEMT's each with 0.75-µm gate length and 0.75-mm gate periphery, a small-signal gain of ~7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at Vds= 18 V and 4.5 W when biased at Vds= 22 V.

Original languageEnglish
Pages (from-to)277-279
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Issue number7
Publication statusPublished - 1 Jan 1999
Externally publishedYes


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